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Title: Photon-induced selenium migration in TiSe 2

Authors:
 [1] ;  [2] ;  [2] ; ORCiD logo [1]
  1. Department of Physics, Drexel University, Philadelphia, Pennsylvania 19104, USA
  2. Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 110 Journal Issue: 8; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1349354

Lioi, David B., Gosztola, David J., Wiederrecht, Gary P., and Karapetrov, Goran. Photon-induced selenium migration in TiSe 2. United States: N. p., Web. doi:10.1063/1.4976745.
Lioi, David B., Gosztola, David J., Wiederrecht, Gary P., & Karapetrov, Goran. Photon-induced selenium migration in TiSe 2. United States. doi:10.1063/1.4976745.
Lioi, David B., Gosztola, David J., Wiederrecht, Gary P., and Karapetrov, Goran. 2017. "Photon-induced selenium migration in TiSe 2". United States. doi:10.1063/1.4976745.
@article{osti_1349354,
title = {Photon-induced selenium migration in TiSe 2},
author = {Lioi, David B. and Gosztola, David J. and Wiederrecht, Gary P. and Karapetrov, Goran},
abstractNote = {},
doi = {10.1063/1.4976745},
journal = {Applied Physics Letters},
number = 8,
volume = 110,
place = {United States},
year = {2017},
month = {2}
}