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Title: Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

Abstract

In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor– inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Lastly, continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.

Authors:
 [1];  [1];  [1];  [1];  [2];  [1];  [1];  [1];  [3];  [1];  [1];  [1];  [4];  [1]
  1. Northwestern Univ., Evanston, IL (United States)
  2. Chiba Univ., Chiba (Japan)
  3. Polyera Corp., Skokie, IL (United States)
  4. Northwestern Univ., Evanston, IL (United States); Polyera Corp., Skokie, IL (United States)
Publication Date:
Research Org.:
Northwestern Univ., Evanston, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1348923
Grant/Contract Number:  
SC0001059; FG02-08ER46536; 26288007; DMR-1121262; CHE-0923236
Resource Type:
Accepted Manuscript
Journal Name:
Proceedings of the National Academy of Sciences of the United States of America
Additional Journal Information:
Journal Volume: 112; Journal Issue: 26; Journal ID: ISSN 0027-8424
Publisher:
National Academy of Sciences, Washington, DC (United States)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 25 ENERGY STORAGE; interfacial layers; photovoltaic; amorphous oxide; interface

Citation Formats

Zhou, Nanjia, Kim, Myung -Gil, Loser, Stephen, Smith, Jeremy, Yoshida, Hiroyuki, Guo, Xugang, Song, Charles, Jin, Hosub, Chen, Zhihua, Yoon, Seok Min, Freeman, Arthur J., Chang, Robert P. H., Facchetti, Antonio, and Marks, Tobin J. Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells. United States: N. p., 2015. Web. doi:10.1073/pnas.1508578112.
Zhou, Nanjia, Kim, Myung -Gil, Loser, Stephen, Smith, Jeremy, Yoshida, Hiroyuki, Guo, Xugang, Song, Charles, Jin, Hosub, Chen, Zhihua, Yoon, Seok Min, Freeman, Arthur J., Chang, Robert P. H., Facchetti, Antonio, & Marks, Tobin J. Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells. United States. doi:10.1073/pnas.1508578112.
Zhou, Nanjia, Kim, Myung -Gil, Loser, Stephen, Smith, Jeremy, Yoshida, Hiroyuki, Guo, Xugang, Song, Charles, Jin, Hosub, Chen, Zhihua, Yoon, Seok Min, Freeman, Arthur J., Chang, Robert P. H., Facchetti, Antonio, and Marks, Tobin J. Mon . "Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells". United States. doi:10.1073/pnas.1508578112. https://www.osti.gov/servlets/purl/1348923.
@article{osti_1348923,
title = {Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells},
author = {Zhou, Nanjia and Kim, Myung -Gil and Loser, Stephen and Smith, Jeremy and Yoshida, Hiroyuki and Guo, Xugang and Song, Charles and Jin, Hosub and Chen, Zhihua and Yoon, Seok Min and Freeman, Arthur J. and Chang, Robert P. H. and Facchetti, Antonio and Marks, Tobin J.},
abstractNote = {In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor– inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Lastly, continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.},
doi = {10.1073/pnas.1508578112},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 26,
volume = 112,
place = {United States},
year = {2015},
month = {6}
}

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