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Title: Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping

Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing chemical disorder. Here we successfully exploit a modulation doping scheme to uncover, in conjunction with a scanning tunnelling microscope tip-assist, a hidden equilibrium phase in a hole-doped bilayer of Sn on Si(111). This new phase is intrinsically phase separated into insulating domains with polar and nonpolar symmetries. Its formation involves a spontaneous symmetry breaking process that appears to be electronically driven, notwithstanding the lack of metallicity in this system. This modulation doping approach allows access to novel phases of matter, promising new avenues for exploring competing quantum matter phases on a silicon platform.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [3] ;  [3] ;  [4] ;  [5]
  1. Univ. of Tennessee, Knoxville, TN (United States)
  2. Inha Univ., Inchon (Korea)
  3. Pennsylvania State Univ., University Park, PA (United States)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
  5. Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 8; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
OSTI Identifier:
1348346

Ming, Fangfei, Mulugeta Amare, Daniel, Tu, Weisong, Smith, Tyler S., Vilmercati, P., Lee, Geunseop, Huang, Ying-Tzu, Diehl, Renee, Snijders, Paul C., and Weitering, Hanno H.. Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping. United States: N. p., Web. doi:10.1038/ncomms14721.
Ming, Fangfei, Mulugeta Amare, Daniel, Tu, Weisong, Smith, Tyler S., Vilmercati, P., Lee, Geunseop, Huang, Ying-Tzu, Diehl, Renee, Snijders, Paul C., & Weitering, Hanno H.. Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping. United States. doi:10.1038/ncomms14721.
Ming, Fangfei, Mulugeta Amare, Daniel, Tu, Weisong, Smith, Tyler S., Vilmercati, P., Lee, Geunseop, Huang, Ying-Tzu, Diehl, Renee, Snijders, Paul C., and Weitering, Hanno H.. 2017. "Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping". United States. doi:10.1038/ncomms14721. https://www.osti.gov/servlets/purl/1348346.
@article{osti_1348346,
title = {Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping},
author = {Ming, Fangfei and Mulugeta Amare, Daniel and Tu, Weisong and Smith, Tyler S. and Vilmercati, P. and Lee, Geunseop and Huang, Ying-Tzu and Diehl, Renee and Snijders, Paul C. and Weitering, Hanno H.},
abstractNote = {Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing chemical disorder. Here we successfully exploit a modulation doping scheme to uncover, in conjunction with a scanning tunnelling microscope tip-assist, a hidden equilibrium phase in a hole-doped bilayer of Sn on Si(111). This new phase is intrinsically phase separated into insulating domains with polar and nonpolar symmetries. Its formation involves a spontaneous symmetry breaking process that appears to be electronically driven, notwithstanding the lack of metallicity in this system. This modulation doping approach allows access to novel phases of matter, promising new avenues for exploring competing quantum matter phases on a silicon platform.},
doi = {10.1038/ncomms14721},
journal = {Nature Communications},
number = ,
volume = 8,
place = {United States},
year = {2017},
month = {3}
}