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Title: Arsenic antisite and oxygen incorporation trends in GaAs grown by water-mediated close-spaced vapor transport

Abstract

Close-spaced vapor transport (CSVT) provides a plausible path to lower the costs of GaAs deposition as it uses only solid precursors and provides precursor utilization in principle approaching 100%. However, the use of H2O as a transport agent causes O to be incorporated in CSVT films, and O has been associated with a number of electrically active defect centers in GaAs, which decrease minority carrier lifetimes. In this paper, using deep-level transient spectroscopy, we study the effect of H2O concentration and substrate temperature on electron trap concentrations in n-type GaAs. We find that the most-prominent O-related center (ELO) typically has a much higher concentration than the center usually associated with As antisites (EL2), but that overall defect concentrations can be as low as those in films deposited by common vapor phase techniques. The trends with increasing H2O concentration suggest that ELO is most likely a defect complex with two As antisites. We also consider the optimal conditions for achieving high growth rates and low defect concentrations using CSVT. Finally, the results of this study have implications for the future CSVT growth using halide transport agents, where the ELO defect would be eliminated but EL2 might have a higher concentration.

Authors:
 [1];  [2]
+ Show Author Affiliations
  1. Univ. of Oregon, Eugene, OR (United States). Dept. of Physics
  2. Univ. of Oregon, Eugene, OR (United States). Dept. of Chemistry and Biochemistry
Publication Date:
Research Org.:
Univ. of Oregon, Eugene, OR (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1465330
Alternate Identifier(s):
OSTI ID: 1348274
Grant/Contract Number:  
EE0005957
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 121; Journal Issue: 9; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; nonlinear acoustics; metal organic chemical vapor deposition; III-V semiconductors; solar cells; vapor phase epitaxy; semiconductor growth; thin film growth; deep level transient spectroscopy

Citation Formats

Boucher, Jason, and Boettcher, Shannon. Arsenic antisite and oxygen incorporation trends in GaAs grown by water-mediated close-spaced vapor transport. United States: N. p., 2017. Web. doi:10.1063/1.4977757.
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Boucher, Jason, & Boettcher, Shannon. Arsenic antisite and oxygen incorporation trends in GaAs grown by water-mediated close-spaced vapor transport. United States. https://doi.org/10.1063/1.4977757
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Boucher, Jason, and Boettcher, Shannon. Mon . "Arsenic antisite and oxygen incorporation trends in GaAs grown by water-mediated close-spaced vapor transport". United States. https://doi.org/10.1063/1.4977757. https://www.osti.gov/servlets/purl/1465330.
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@article{osti_1465330,
title = {Arsenic antisite and oxygen incorporation trends in GaAs grown by water-mediated close-spaced vapor transport},
author = {Boucher, Jason and Boettcher, Shannon},
abstractNote = {Close-spaced vapor transport (CSVT) provides a plausible path to lower the costs of GaAs deposition as it uses only solid precursors and provides precursor utilization in principle approaching 100%. However, the use of H2O as a transport agent causes O to be incorporated in CSVT films, and O has been associated with a number of electrically active defect centers in GaAs, which decrease minority carrier lifetimes. In this paper, using deep-level transient spectroscopy, we study the effect of H2O concentration and substrate temperature on electron trap concentrations in n-type GaAs. We find that the most-prominent O-related center (ELO) typically has a much higher concentration than the center usually associated with As antisites (EL2), but that overall defect concentrations can be as low as those in films deposited by common vapor phase techniques. The trends with increasing H2O concentration suggest that ELO is most likely a defect complex with two As antisites. We also consider the optimal conditions for achieving high growth rates and low defect concentrations using CSVT. Finally, the results of this study have implications for the future CSVT growth using halide transport agents, where the ELO defect would be eliminated but EL2 might have a higher concentration.},
doi = {10.1063/1.4977757},
journal = {Journal of Applied Physics},
number = 9,
volume = 121,
place = {United States},
year = {Mon Mar 06 00:00:00 EST 2017},
month = {Mon Mar 06 00:00:00 EST 2017}
}
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https://doi.org/10.1063/1.4977757
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