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Title: MoS2 transistors with 1-nanometer gate lengths

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Additional Journal Information:
Journal Name: Science Journal Volume: 354 Journal Issue: 6308; Journal ID: ISSN 0036-8075
American Association for the Advancement of Science (AAAS)
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United States

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Desai, S. B., Madhvapathy, S. R., Sachid, A. B., Llinas, J. P., Wang, Q., Ahn, G. H., Pitner, G., Kim, M. J., Bokor, J., Hu, C., Wong, H. -. S. P., and Javey, A. MoS2 transistors with 1-nanometer gate lengths. United States: N. p., 2016. Web. doi:10.1126/science.aah4698.
Desai, S. B., Madhvapathy, S. R., Sachid, A. B., Llinas, J. P., Wang, Q., Ahn, G. H., Pitner, G., Kim, M. J., Bokor, J., Hu, C., Wong, H. -. S. P., & Javey, A. MoS2 transistors with 1-nanometer gate lengths. United States. doi:10.1126/science.aah4698.
Desai, S. B., Madhvapathy, S. R., Sachid, A. B., Llinas, J. P., Wang, Q., Ahn, G. H., Pitner, G., Kim, M. J., Bokor, J., Hu, C., Wong, H. -. S. P., and Javey, A. Thu . "MoS2 transistors with 1-nanometer gate lengths". United States. doi:10.1126/science.aah4698.
title = {MoS2 transistors with 1-nanometer gate lengths},
author = {Desai, S. B. and Madhvapathy, S. R. and Sachid, A. B. and Llinas, J. P. and Wang, Q. and Ahn, G. H. and Pitner, G. and Kim, M. J. and Bokor, J. and Hu, C. and Wong, H. -. S. P. and Javey, A.},
abstractNote = {},
doi = {10.1126/science.aah4698},
journal = {Science},
number = 6308,
volume = 354,
place = {United States},
year = {2016},
month = {10}

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DOI: 10.1126/science.aah4698

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