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Title: MoS2 transistors with 1-nanometer gate lengths

Authors:
; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Published Article
Journal Name:
Science
Additional Journal Information:
Journal Name: Science Journal Volume: 354 Journal Issue: 6308; Journal ID: ISSN 0036-8075
Publisher:
American Association for the Advancement of Science (AAAS)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1347831

Desai, S. B., Madhvapathy, S. R., Sachid, A. B., Llinas, J. P., Wang, Q., Ahn, G. H., Pitner, G., Kim, M. J., Bokor, J., Hu, C., Wong, H. -. S. P., and Javey, A.. MoS2 transistors with 1-nanometer gate lengths. United States: N. p., Web. doi:10.1126/science.aah4698.
Desai, S. B., Madhvapathy, S. R., Sachid, A. B., Llinas, J. P., Wang, Q., Ahn, G. H., Pitner, G., Kim, M. J., Bokor, J., Hu, C., Wong, H. -. S. P., & Javey, A.. MoS2 transistors with 1-nanometer gate lengths. United States. doi:10.1126/science.aah4698.
Desai, S. B., Madhvapathy, S. R., Sachid, A. B., Llinas, J. P., Wang, Q., Ahn, G. H., Pitner, G., Kim, M. J., Bokor, J., Hu, C., Wong, H. -. S. P., and Javey, A.. 2016. "MoS2 transistors with 1-nanometer gate lengths". United States. doi:10.1126/science.aah4698.
@article{osti_1347831,
title = {MoS2 transistors with 1-nanometer gate lengths},
author = {Desai, S. B. and Madhvapathy, S. R. and Sachid, A. B. and Llinas, J. P. and Wang, Q. and Ahn, G. H. and Pitner, G. and Kim, M. J. and Bokor, J. and Hu, C. and Wong, H. -. S. P. and Javey, A.},
abstractNote = {},
doi = {10.1126/science.aah4698},
journal = {Science},
number = 6308,
volume = 354,
place = {United States},
year = {2016},
month = {10}
}

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