DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Protection of extreme ultraviolet lithography masks. II. Showerhead flow mitigation of nanoscale particulate contamination [Protection of EUV lithography masks II: Showerhead flow mitigation of nanoscale particulate contamination]

Abstract

An analysis is presented of a method to protect the reticle (mask) in an extreme ultraviolet (EUV) mask inspection tool using a showerhead plenum to provide a continuous flow of clean gas over the surface of a reticle. The reticle is suspended in an inverted fashion (face down) within a stage/holder that moves back and forth over the showerhead plenum as the reticle is inspected. It is essential that no particles of 10-nm diameter or larger be deposited on the reticle during inspection. Particles can originate from multiple sources in the system, and mask protection from each source is explicitly analyzed. The showerhead plate has an internal plenum with a solid conical wall isolating the aperture. The upper and lower surfaces of the plate are thin flat sheets of porous-metal material. These porous sheets form the top and bottom showerheads that supply the region between the showerhead plate and the reticle and the region between the conical aperture and the Optics Zone box with continuous flows of clean gas. The model studies show that the top showerhead provides robust reticle protection from particles of 10-nm diameter or larger originating from the Reticle Zone and from plenum surfaces contaminated by exposuremore » to the Reticle Zone. Protection is achieved with negligible effect on EUV transmission. Furthermore, the bottom showerhead efficiently protects the reticle from nanoscale particles originating from the Optics Zone.« less

Authors:
 [1];  [2];  [2];  [2];  [2];  [3];  [3];  [3]
  1. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. KLA-Tencor Corp., Milpitas, CA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1347354
Report Number(s):
SAND-2013-8870J
Journal ID: ISSN 2166-2746; 547351
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Volume: 33; Journal Issue: 3; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society/AIP
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Klebanoff, Leonard E., Torczynski, John R., Geller, Anthony S., Gallis, Michael A., Rader, Daniel J., Chilese, Frank C., Garcia, Rudy F., and Delgado, Gil. Protection of extreme ultraviolet lithography masks. II. Showerhead flow mitigation of nanoscale particulate contamination [Protection of EUV lithography masks II: Showerhead flow mitigation of nanoscale particulate contamination]. United States: N. p., 2015. Web. doi:10.1116/1.4916212.
Klebanoff, Leonard E., Torczynski, John R., Geller, Anthony S., Gallis, Michael A., Rader, Daniel J., Chilese, Frank C., Garcia, Rudy F., & Delgado, Gil. Protection of extreme ultraviolet lithography masks. II. Showerhead flow mitigation of nanoscale particulate contamination [Protection of EUV lithography masks II: Showerhead flow mitigation of nanoscale particulate contamination]. United States. https://doi.org/10.1116/1.4916212
Klebanoff, Leonard E., Torczynski, John R., Geller, Anthony S., Gallis, Michael A., Rader, Daniel J., Chilese, Frank C., Garcia, Rudy F., and Delgado, Gil. Fri . "Protection of extreme ultraviolet lithography masks. II. Showerhead flow mitigation of nanoscale particulate contamination [Protection of EUV lithography masks II: Showerhead flow mitigation of nanoscale particulate contamination]". United States. https://doi.org/10.1116/1.4916212. https://www.osti.gov/servlets/purl/1347354.
@article{osti_1347354,
title = {Protection of extreme ultraviolet lithography masks. II. Showerhead flow mitigation of nanoscale particulate contamination [Protection of EUV lithography masks II: Showerhead flow mitigation of nanoscale particulate contamination]},
author = {Klebanoff, Leonard E. and Torczynski, John R. and Geller, Anthony S. and Gallis, Michael A. and Rader, Daniel J. and Chilese, Frank C. and Garcia, Rudy F. and Delgado, Gil},
abstractNote = {An analysis is presented of a method to protect the reticle (mask) in an extreme ultraviolet (EUV) mask inspection tool using a showerhead plenum to provide a continuous flow of clean gas over the surface of a reticle. The reticle is suspended in an inverted fashion (face down) within a stage/holder that moves back and forth over the showerhead plenum as the reticle is inspected. It is essential that no particles of 10-nm diameter or larger be deposited on the reticle during inspection. Particles can originate from multiple sources in the system, and mask protection from each source is explicitly analyzed. The showerhead plate has an internal plenum with a solid conical wall isolating the aperture. The upper and lower surfaces of the plate are thin flat sheets of porous-metal material. These porous sheets form the top and bottom showerheads that supply the region between the showerhead plate and the reticle and the region between the conical aperture and the Optics Zone box with continuous flows of clean gas. The model studies show that the top showerhead provides robust reticle protection from particles of 10-nm diameter or larger originating from the Reticle Zone and from plenum surfaces contaminated by exposure to the Reticle Zone. Protection is achieved with negligible effect on EUV transmission. Furthermore, the bottom showerhead efficiently protects the reticle from nanoscale particles originating from the Optics Zone.},
doi = {10.1116/1.4916212},
journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
number = 3,
volume = 33,
place = {United States},
year = {Fri Mar 27 00:00:00 EDT 2015},
month = {Fri Mar 27 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

Save / Share: