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Title: Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure

In this paper, we report continuous, dynamic, reversible, and widely tunable lasing from 367 to 337 nm from single GaN nanowires (NWs) by applying hydrostatic pressure up to ~7 GPa. The GaN NW lasers, with heights of 4–5 μm and diameters ~140 nm, are fabricated using a lithographically defined two-step top-down technique. The wavelength tuning is caused by an increasing Γ direct bandgap of GaN with increasing pressure and is precisely controllable to subnanometer resolution. The observed pressure coefficients of the NWs are ~40% larger compared with GaN microstructures fabricated from the same material or from reported bulk GaN values, revealing a nanoscale-related effect that significantly enhances the tuning range using this approach. Finally, this approach can be generally applied to other semiconductor NW lasers to potentially achieve full spectral coverage from the UV to IR.
 [1] ;  [2] ;  [3] ;  [2] ;  [1] ;  [3]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
  2. Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 2040-3364; 562194
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Additional Journal Information:
Journal Volume: 7; Journal Issue: 21; Journal ID: ISSN 2040-3364
Royal Society of Chemistry
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Contributing Orgs:
Univ. of New Mexico, Albuquerque, NM (United States)
Country of Publication:
United States
77 NANOSCIENCE AND NANOTECHNOLOGY; nanowire; GaN; photoluminescence; lasing; tuning; top-down; bandgap
OSTI Identifier: