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Title: Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

In this paper, we have characterized the total ionizing dose response of strained Ge p MOS FinFETs built on bulk Si using a fin replacement process. Devices irradiated to 1.0 Mrad(SiO2) show minimal transconductance degradation (less than 5%), very small Vth shifts (less than 40 mV in magnitude) and very little ON/OFF current ratio degradation (<5%), and only modest variation in radiation response with transistor geometry (typically less than normal part-to-part variation). Both before and after irradiation, the performance of these strained Ge p MOS FinFETs is far superior to that of past generations of planar Ge p MOS devices. Finally, these improved properties result from significant improvements in processing technology, as well as the enhanced gate control provided by the strained Ge FinFET technology.
Authors:
 [1] ;  [1] ;  [2] ;  [3] ;  [1] ;  [1] ;  [1] ;  [1] ;  [4] ;  [4] ;  [5] ;  [2] ;  [3]
  1. Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical Engineering and Computer Science
  2. Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy
  3. (ORNL), Oak Ridge, TN (United States)
  4. Interuniversity Microelectronics Centre (IMEC), Leuven (Belgium)
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
Publication Date:
Grant/Contract Number:
AC05-00OR22725; FG02-09ER46554
Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 64; Journal Issue: 1; Journal ID: ISSN 0018-9499
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); Air Force Research Lab. (AFRL) (United States); US Air Force Office of Scientific Research (AFOSR); Defense Threat Reduction Agency (DTRA) (United States)
Contributing Orgs:
Interuniversity Microelectronics Centre (IMEC), Leuven (Belgium)
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS; total ionizing dose; 10 keV X-ray; geometry dependence; germanium FinFETs
OSTI Identifier:
1347337