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Title: Irradiation resistance of silicon carbide joint at light water reactor–relevant temperature

We fabricated and irradiated monolithic silicon carbide (SiC) to SiC plate joints with neutrons at 270–310 °C to 8.7 dpa for SiC. The joining methods included solid state diffusion bonding using titanium and molybdenum interlayers, SiC nanopowder sintering, reaction sintering with a Ti-Si-C system, and hybrid processing of polymer pyrolysis and chemical vapor infiltration (CVI). All the irradiated joints exhibited apparent shear strength of more than 84 MPa on average. Significant irradiation-induced cracking was found in the bonding layers of the Ti and Mo diffusion bonds and Ti-Si-C reaction sintered bond. Furthermore, the SiC-based bonding layers of the SiC nanopowder sintered and hybrid polymer pyrolysis and CVI joints all showed stable microstructure following the irradiation.
Authors:
 [1] ;  [1] ;  [1] ;  [2] ;  [3] ;  [3] ;  [3]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Kyoto Univ. (Japan)
  3. General Atomics, San Diego, CA (United States)
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
Journal of Nuclear Materials
Additional Journal Information:
Journal Volume: 488; Journal Issue: C; Journal ID: ISSN 0022-3115
Publisher:
Elsevier
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). High Flux Isotope Reactor (HFIR); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). High Temperature Materials Lab. (HTML)
Sponsoring Org:
USDOE Office of Nuclear Energy (NE)
Country of Publication:
United States
Language:
English
Subject:
21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS
OSTI Identifier:
1347314
Alternate Identifier(s):
OSTI ID: 1396901

Koyanagi, T., Katoh, Y., Kiggans, J. O., Hinoki, T., Khalifa, H. E., Deck, C. P., and Back, C. A.. Irradiation resistance of silicon carbide joint at light water reactor–relevant temperature. United States: N. p., Web. doi:10.1016/j.jnucmat.2017.03.017.
Koyanagi, T., Katoh, Y., Kiggans, J. O., Hinoki, T., Khalifa, H. E., Deck, C. P., & Back, C. A.. Irradiation resistance of silicon carbide joint at light water reactor–relevant temperature. United States. doi:10.1016/j.jnucmat.2017.03.017.
Koyanagi, T., Katoh, Y., Kiggans, J. O., Hinoki, T., Khalifa, H. E., Deck, C. P., and Back, C. A.. 2017. "Irradiation resistance of silicon carbide joint at light water reactor–relevant temperature". United States. doi:10.1016/j.jnucmat.2017.03.017. https://www.osti.gov/servlets/purl/1347314.
@article{osti_1347314,
title = {Irradiation resistance of silicon carbide joint at light water reactor–relevant temperature},
author = {Koyanagi, T. and Katoh, Y. and Kiggans, J. O. and Hinoki, T. and Khalifa, H. E. and Deck, C. P. and Back, C. A.},
abstractNote = {We fabricated and irradiated monolithic silicon carbide (SiC) to SiC plate joints with neutrons at 270–310 °C to 8.7 dpa for SiC. The joining methods included solid state diffusion bonding using titanium and molybdenum interlayers, SiC nanopowder sintering, reaction sintering with a Ti-Si-C system, and hybrid processing of polymer pyrolysis and chemical vapor infiltration (CVI). All the irradiated joints exhibited apparent shear strength of more than 84 MPa on average. Significant irradiation-induced cracking was found in the bonding layers of the Ti and Mo diffusion bonds and Ti-Si-C reaction sintered bond. Furthermore, the SiC-based bonding layers of the SiC nanopowder sintered and hybrid polymer pyrolysis and CVI joints all showed stable microstructure following the irradiation.},
doi = {10.1016/j.jnucmat.2017.03.017},
journal = {Journal of Nuclear Materials},
number = C,
volume = 488,
place = {United States},
year = {2017},
month = {3}
}