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Title: Effects of hydrogen on acceptor activation in ternary nitride semiconductors

Doping control is necessary to unlock the scientific and technological potential of many materials, including ternary II-IV-nitride semiconductors, which are closely related to binary GaN. In particular, ZnSnN 2 has been reported to have degenerate doping density, despite bandgap energies that are well suited for solar energy conversion. Here, we show that annealing Zn-rich Zn 1+xSn 1-xN 2 grown with added hydrogen reduces its free electron density by orders of magnitude, down to 4 x 10 16 cm -3. This experimental observation can be explained by hydrogen passivation of acceptors in Zn 1+xSn 1-xN 2 during growth, lowering the driving force for unintentional donor formation. Lastly, these results indicate that the doping control principles used in GaN can be translated to ZnSnN 2, suggesting that other strategies used in binary III-Vs can be applied to accelerate the technological development of ternary II-IV-N 2 materials.
 [1] ;  [1] ;  [2] ;  [3] ;  [1] ;  [1] ;  [2]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Colorado School of Mines, Golden, CO (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 2199-160X
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 3; Journal ID: ISSN 2199-160X
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; annealing; hydrogen; nitride; photovoltaics; semiconductor
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1401270