Evolution of microstructural disorder in annealed bismuth telluride nanowires

Erickson, Kristopher J.; Limmer, Steven J.; Yelton, W. Graham; Rochford, Caitlin; Siegal, Michael P.; Medlin, Douglas L.

doi:10.1149/2.0181703jss

Title: Evolution of microstructural disorder in annealed bismuth telluride nanowires

Journal Article · 28 February 2017 · ECS Journal of Solid State Science and Technology

DOI: https://doi.org/10.1149/2.0181703jss · OSTI ID:1346699

Erickson, Kristopher J. ^[1]; Limmer, Steven J. ^[2]; Yelton, W. Graham ^[3]; Rochford, Caitlin ^[3]; Siegal, Michael P. ^[3];

^[4]

Sandia National Lab. (SNL-CA), Livermore, CA (United States); Hewlett-Packard Lab., Palo Alto, CA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Energizer Household Products, Westlake, OH (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Lab. (SNL-CA), Livermore, CA (United States)

Controlling the distribution of structural defects in nanostructures is important since such defects can strongly affect critical properties, including thermal and electronic transport. However, characterizing the defect arrangements in individual nanostructures is difficult because of the small length scales involved. Here, we investigate the evolution of microstructural disorder with annealing in electrochemically deposited Bi2Te3 nanowires, which are of interest for thermoelectrics. We combine Convergent Beam Electron Diffraction (CBED) and Scanning Transmission Electron Microscopy (STEM) to provide the necessary spatial and orientational resolution. We find that despite their large initial grain sizes and strong Formula crystallographic texturing, the as-deposited nanowires still exhibit significant intragranular orientational disorder. Annealing drives both grain growth and a significant reduction in the intragranular disorder. The results are discussed in the context of the existing understanding of the initial microstructure of electrodeposited materials and the understanding of annealing microstructures in both electrochemically deposited and bulk-deformed materials. Finally, this analysis highlights the importance of assessing both the grain size and intragranular disorder in understanding the microstructural evolution of individual nanostructures.

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Research Organization:: Sandia National Laboratories (SNL-CA), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1346699

Report Number(s):: SAND--2017-2223J; 651257

Journal Information:: ECS Journal of Solid State Science and Technology, Journal Name: ECS Journal of Solid State Science and Technology Journal Issue: 3 Vol. 6; ISSN 2162-8769

Publisher:: Electrochemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
bismuth telluride
crystal defects
electrodeposition
electron microscopy
grain boundaries
nanowires
thermoelectric

Title: Evolution of microstructural disorder in annealed bismuth telluride nanowires

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