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Title: Evolution of microstructural disorder in annealed bismuth telluride nanowires

Abstract

Controlling the distribution of structural defects in nanostructures is important since such defects can strongly affect critical properties, including thermal and electronic transport. However, characterizing the defect arrangements in individual nanostructures is difficult because of the small length scales involved. Here, we investigate the evolution of microstructural disorder with annealing in electrochemically deposited Bi2Te3 nanowires, which are of interest for thermoelectrics. We combine Convergent Beam Electron Diffraction (CBED) and Scanning Transmission Electron Microscopy (STEM) to provide the necessary spatial and orientational resolution. We find that despite their large initial grain sizes and strong Formula crystallographic texturing, the as-deposited nanowires still exhibit significant intragranular orientational disorder. Annealing drives both grain growth and a significant reduction in the intragranular disorder. The results are discussed in the context of the existing understanding of the initial microstructure of electrodeposited materials and the understanding of annealing microstructures in both electrochemically deposited and bulk-deformed materials. Finally, this analysis highlights the importance of assessing both the grain size and intragranular disorder in understanding the microstructural evolution of individual nanostructures.

Authors:
 [1];  [2];  [3];  [3];  [3]; ORCiD logo [4]
+ Show Author Affiliations
  1. Sandia National Lab. (SNL-CA), Livermore, CA (United States); Hewlett-Packard Lab., Palo Alto, CA (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Energizer Household Products, Westlake, OH (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  4. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1346699
Report Number(s):
SAND-2017-2223J
Journal ID: ISSN 2162-8769; 651257
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
ECS Journal of Solid State Science and Technology
Additional Journal Information:
Journal Volume: 6; Journal Issue: 3; Journal ID: ISSN 2162-8769
Publisher:
Electrochemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; bismuth telluride; crystal defects; electrodeposition; electron microscopy; grain boundaries; nanowires; thermoelectric

Citation Formats

Erickson, Kristopher J., Limmer, Steven J., Yelton, W. Graham, Rochford, Caitlin, Siegal, Michael P., and Medlin, Douglas L. Evolution of microstructural disorder in annealed bismuth telluride nanowires. United States: N. p., 2017. Web. doi:10.1149/2.0181703jss.
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Erickson, Kristopher J., Limmer, Steven J., Yelton, W. Graham, Rochford, Caitlin, Siegal, Michael P., & Medlin, Douglas L. Evolution of microstructural disorder in annealed bismuth telluride nanowires. United States. https://doi.org/10.1149/2.0181703jss
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Erickson, Kristopher J., Limmer, Steven J., Yelton, W. Graham, Rochford, Caitlin, Siegal, Michael P., and Medlin, Douglas L. Wed . "Evolution of microstructural disorder in annealed bismuth telluride nanowires". United States. https://doi.org/10.1149/2.0181703jss. https://www.osti.gov/servlets/purl/1346699.
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@article{osti_1346699,
title = {Evolution of microstructural disorder in annealed bismuth telluride nanowires},
author = {Erickson, Kristopher J. and Limmer, Steven J. and Yelton, W. Graham and Rochford, Caitlin and Siegal, Michael P. and Medlin, Douglas L.},
abstractNote = {Controlling the distribution of structural defects in nanostructures is important since such defects can strongly affect critical properties, including thermal and electronic transport. However, characterizing the defect arrangements in individual nanostructures is difficult because of the small length scales involved. Here, we investigate the evolution of microstructural disorder with annealing in electrochemically deposited Bi2Te3 nanowires, which are of interest for thermoelectrics. We combine Convergent Beam Electron Diffraction (CBED) and Scanning Transmission Electron Microscopy (STEM) to provide the necessary spatial and orientational resolution. We find that despite their large initial grain sizes and strong Formula crystallographic texturing, the as-deposited nanowires still exhibit significant intragranular orientational disorder. Annealing drives both grain growth and a significant reduction in the intragranular disorder. The results are discussed in the context of the existing understanding of the initial microstructure of electrodeposited materials and the understanding of annealing microstructures in both electrochemically deposited and bulk-deformed materials. Finally, this analysis highlights the importance of assessing both the grain size and intragranular disorder in understanding the microstructural evolution of individual nanostructures.},
doi = {10.1149/2.0181703jss},
journal = {ECS Journal of Solid State Science and Technology},
number = 3,
volume = 6,
place = {United States},
year = {Wed Mar 01 00:00:00 EST 2017},
month = {Wed Mar 01 00:00:00 EST 2017}
}
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https://doi.org/10.1149/2.0181703jss
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