Positron annihilation spectroscopy investigation of vacancy defects in neutron-irradiated 3C -SiC

Hu, Xunxiang; Koyanagi, Takaaki; Katoh, Yutai; Wirth, Brian D.

doi:10.1103/PhysRevB.95.104103

Title: Positron annihilation spectroscopy investigation of vacancy defects in neutron-irradiated $3 C$ -SiC

Abstract

We described positron annihilation spectroscopy characterization results for neutron-irradiated 3 C -SiC, with a specific focus on explaining the size and character of vacancy clusters as a complement to the current understanding of the neutron irradiation response of 3 C -SiC. Positron annihilation lifetime spectroscopy was used to capture the irradiation temperature and dose dependence of vacancy defects in 3 C -SiC following neutron irradiation from 0.01 to 31 dpa in the temperature range from 380C °to 790C .° The neutral and negatively charged vacancy clusters were identified and quantified. The results suggest that the vacancy defects that were measured by positron annihilation spectroscopy technique contribute very little to the transient swelling of SiC. Additionally, we used coincidence Doppler broadening measurement to investigate the chemical identity surrounding the positron trapping sites.Finally, we found that silicon vacancy-related defects dominate in the studied materials and the production of the antisite defect C_Si may result in an increase in the probability of positron annihilation with silicon core electrons.

Authors:

Hu, Xunxiang ^[1]; Koyanagi, Takaaki ^[1]; Katoh, Yutai ^[1]; Wirth, Brian D. ^[1]; Univ. of Tennessee, Knoxville, TN ^[2]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
(United States)

Publication Date:: Fri Mar 10 00:00:00 EST 2017

Research Org.:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). High Flux Isotope Reactor (HFIR)

Sponsoring Org.:: USDOE Office of Science (SC), Fusion Energy Sciences (FES)

OSTI Identifier:: 1360051

Alternate Identifier(s):: OSTI ID: 1346582

Grant/Contract Number:: AC05-00OR22725; SC0006661

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Volume: 95; Journal Issue: 10; Journal ID: ISSN 2469-9950

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Hu, Xunxiang, Koyanagi, Takaaki, Katoh, Yutai, Wirth, Brian D., and Univ. of Tennessee, Knoxville, TN. Positron annihilation spectroscopy investigation of vacancy defects in neutron-irradiated 3C -SiC.  United States: N. p., 2017. 
Web.  doi:10.1103/PhysRevB.95.104103.

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                    Hu, Xunxiang, Koyanagi, Takaaki, Katoh, Yutai, Wirth, Brian D., & Univ. of Tennessee, Knoxville, TN. Positron annihilation spectroscopy investigation of vacancy defects in neutron-irradiated 3C -SiC.  United States.  https://doi.org/10.1103/PhysRevB.95.104103

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                    Hu, Xunxiang, Koyanagi, Takaaki, Katoh, Yutai, Wirth, Brian D., and Univ. of Tennessee, Knoxville, TN. Fri .  
"Positron annihilation spectroscopy investigation of vacancy defects in neutron-irradiated 3C -SiC".  United States.  https://doi.org/10.1103/PhysRevB.95.104103.  https://www.osti.gov/servlets/purl/1360051.

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@article{osti_1360051,

  title        = {Positron annihilation spectroscopy investigation of vacancy defects in neutron-irradiated 3C -SiC},

  author       = {Hu, Xunxiang and Koyanagi, Takaaki and Katoh, Yutai and Wirth, Brian D. and Univ. of Tennessee, Knoxville, TN},

  abstractNote = {We described positron annihilation spectroscopy characterization results for neutron-irradiated 3 C -SiC, with a specific focus on explaining the size and character of vacancy clusters as a complement to the current understanding of the neutron irradiation response of 3 C -SiC. Positron annihilation lifetime spectroscopy was used to capture the irradiation temperature and dose dependence of vacancy defects in 3 C -SiC following neutron irradiation from 0.01 to 31 dpa in the temperature range from 380C °to 790C .° The neutral and negatively charged vacancy clusters were identified and quantified. The results suggest that the vacancy defects that were measured by positron annihilation spectroscopy technique contribute very little to the transient swelling of SiC. Additionally, we used coincidence Doppler broadening measurement to investigate the chemical identity surrounding the positron trapping sites.Finally, we found that silicon vacancy-related defects dominate in the studied materials and the production of the antisite defect CSi may result in an increase in the probability of positron annihilation with silicon core electrons.},

  doi          = {10.1103/PhysRevB.95.104103},

  journal      = {Physical Review B},

  number       = 10,

  volume       = 95,

  place        = {United States},

  year         = {Fri Mar 10 00:00:00 EST 2017},

  month        = {Fri Mar 10 00:00:00 EST 2017}

}

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Works referencing / citing this record:

Study of structural changes for STS 316L using the positron annihilation lifetime spectroscopy
journal, October 2019

Jeon, Yeoryeong; Uhm, Young Rang; Sun, Gwang Min
Journal of Radioanalytical and Nuclear Chemistry, Vol. 322, Issue 3
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Size-dependent toughness and strength in defective 3C-SiC nanowires
journal, October 2019

Ma, Ling; Hao, Tengyuan; Hossain, Zubaer M.
Journal of Applied Physics, Vol. 126, Issue 16
DOI: 10.1063/1.5120034

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Title: Positron annihilation spectroscopy investigation of vacancy defects in neutron-irradiated 3C -SiC

Abstract

Citation Formats

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Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches journal, July 2008

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Neutron irradiation-induced voids in β-silicon carbide journal, August 1973

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Disordering of silicon carbide during neutron irradiation journal, January 1976

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Ab initio and empirical-potential studies of defect properties in 3 C − SiC journal, December 2001

Positron Annihilation Spectroscopy journal, August 1980

Atomic-scale simulation of 50 keV Si displacement cascades in β-SiC journal, December 2000

Photoluminescence of radiation induced defects in 3C‐SiC epitaxially grown on Si journal, January 1995

Signature of the Negative Carbon Vacancy-Antisite Complex journal, October 2006

Critical issues and current status of SiC/SiC composites for fusion journal, December 2000

Continuous SiC fiber, CVI SiC matrix composites for nuclear applications: Properties and irradiation effects journal, May 2014

Electronic structure investigation of energetics and positron lifetimes of fully relaxed monovacancies with various charge states in 3 C -SiC and 6 H -SiC journal, June 2013

Positron studies of defects in ion-implanted SiC journal, August 1996

Silicon vacancy-type defects in as-received and 12-MeV proton-irradiated 6 H − SiC studied by positron annihilation spectroscopy journal, March 2003

Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance journal, August 1998

Positron annihilation spectroscopy investigation of vacancy clusters in silicon carbide: Combining experiments and electronic structure calculations journal, April 2014

Characterization of Defects in Electron Irradiated 6H-SiC by Positron Lifetime and Electron Spin Resonance journal, February 1998

Defect evolution in single crystalline tungsten following low temperature and low dose neutron irradiation journal, March 2016

Positron lifetime calculation for the elements of the periodic table journal, April 2007

Multi-nuclear NMR study of polytype and defect distribution in neutron irradiated silicon carbide journal, January 2014

Annealing processes of vacancy‐type defects in electron‐irradiated and as‐grown 6 H ‐SiC studied by positron lifetime spectroscopy journal, November 1996

Precision measurement of the decay rate of the negative positronium ion Ps − journal, December 2011

Silicon and carbon vacancies in neutron-irradiated SiC: A high-field electron paramagnetic resonance study journal, March 2003

Microstructural development in cubic silicon carbide during irradiation at elevated temperatures journal, June 2006

Identification of the Carbon Antisite-Vacancy Pair in 4 H -SiC journal, April 2006

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Title: Positron annihilation spectroscopy investigation of vacancy defects in neutron-irradiated $3 C$ -SiC

Identification of the carbon antisite in SiC: EPR of ${}^{13}C$ enriched crystals
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Accident tolerant fuels for LWRs: A perspective
journal, May 2014

Ab initio study of the migration of intrinsic defects in $3 C - SiC$
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Carbon and silicon vacancies in electron-irradiated 6 H -SiC
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Handbook of SiC properties for fuel performance modeling
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Positron annihilation of vacancy-type defects in neutron-irradiated 4H–SiC
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Defect identification in semiconductors with positron annihilation: Experiment and theory
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Irradiation effects on thermal diffusivity and positron annihilation lifetime in ceramics induced by neutron and 30 MeV electron
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Evaluation of some basic positron-related characteristics of SiC
journal, July 1996

Neutron irradiation-induced voids in β-silicon carbide
journal, August 1973

Positron lifetime spectroscopic studies of as-grown 6H-silicon carbide
journal, January 2000

Clustering of vacancy defects in high-purity semi-insulating SiC
journal, February 2007

Radiation effects in SiC for nuclear structural applications
journal, June 2012

Disordering of silicon carbide during neutron irradiation
journal, January 1976

High-temperature annealing behavior of deep levels in 1MeV electron irradiated p-type 6H-SiC
journal, July 2008

Defects in Semi-Insulating SiC Substrates
journal, September 2003

Observation and possible mechanism of irradiation induced creep in ceramics
journal, March 2013

Comprehensive ab initio study of properties of monovacancies and antisites in 4H-SiC
journal, June 2001

Ab initio and empirical-potential studies of defect properties in $3 C - SiC$
journal, December 2001

Positron Annihilation Spectroscopy
journal, August 1980

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journal, December 2000

Photoluminescence of radiation induced defects in 3C‐SiC epitaxially grown on Si
journal, January 1995

Signature of the Negative Carbon Vacancy-Antisite Complex
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Positron studies of defects in ion-implanted SiC
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Silicon vacancy-type defects in as-received and 12-MeV proton-irradiated $6 H - SiC$ studied by positron annihilation spectroscopy
journal, March 2003

Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance
journal, August 1998

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journal, April 2014

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Multi-nuclear NMR study of polytype and defect distribution in neutron irradiated silicon carbide
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Annealing processes of vacancy‐type defects in electron‐irradiated and as‐grown 6 H ‐SiC studied by positron lifetime spectroscopy
journal, November 1996

Precision measurement of the decay rate of the negative positronium ion Ps $^{-}$
journal, December 2011

Silicon and carbon vacancies in neutron-irradiated SiC: A high-field electron paramagnetic resonance study
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Microstructural development in cubic silicon carbide during irradiation at elevated temperatures
journal, June 2006

Identification of the Carbon Antisite-Vacancy Pair in $4 H$ -SiC
journal, April 2006

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Study of structural changes for STS 316L using the positron annihilation lifetime spectroscopy
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