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Title: Valley splitting of single-electron Si MOS quantum dots

Here, silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from an experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both this and a recently reported experiment. Through sampling millions of realistic cases of interface roughness, our method provides evidence that the valley physics between the two samples is essentially the same.
Authors:
 [1] ;  [2] ;  [1] ;  [1] ;  [1] ; ORCiD logo [1] ;  [1] ;  [1] ;  [1] ;  [3] ;  [4] ;  [3] ; ORCiD logo [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Univ. de Sherbrooke, Sherbrooke, QC (Canada); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. The Univ. of New South Wales, Sydney (Australia)
  4. Univ. of Cambridge, Cambridge (United Kingdom)
Publication Date:
Report Number(s):
SAND-2016-10270J
Journal ID: ISSN 0003-6951; APPLAB; 648248; TRN: US1701126
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 25; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
OSTI Identifier:
1346544
Alternate Identifier(s):
OSTI ID: 1421186