skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb) 2Te 3 film

Abstract

The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb) 2Te 3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb) 2Te 3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Finally, our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.

Authors:
 [1];  [1];  [2];  [1];  [3];  [1];  [3];  [3];  [4];  [4];  [1];  [2];  [3];  [3]
  1. SLAC National Accelerator Lab. and Stanford Univ., Menlo Park, CA (United States)
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  3. SLAC National Accelerator Lab. and Stanford Univ., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1346529
Report Number(s):
SLAC-PUB-16816
Journal ID: ISSN 2045-2322; TRN: US1701661
Grant/Contract Number:  
AC02-76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; SYNCHRAD; condensed-matter physics

Citation Formats

Li, W., Claassen, M., Chang, Cui -Zu, Moritz, B., Jia, T., Zhang, C., Rebec, S., Lee, J. J., Hashimoto, M., Lu, D. -H., Moore, R. G., Moodera, J. S., Devereaux, T. P., and Shen, Z. -X. Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film. United States: N. p., 2016. Web. doi:10.1038/srep32732.
Li, W., Claassen, M., Chang, Cui -Zu, Moritz, B., Jia, T., Zhang, C., Rebec, S., Lee, J. J., Hashimoto, M., Lu, D. -H., Moore, R. G., Moodera, J. S., Devereaux, T. P., & Shen, Z. -X. Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film. United States. doi:10.1038/srep32732.
Li, W., Claassen, M., Chang, Cui -Zu, Moritz, B., Jia, T., Zhang, C., Rebec, S., Lee, J. J., Hashimoto, M., Lu, D. -H., Moore, R. G., Moodera, J. S., Devereaux, T. P., and Shen, Z. -X. Wed . "Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film". United States. doi:10.1038/srep32732. https://www.osti.gov/servlets/purl/1346529.
@article{osti_1346529,
title = {Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film},
author = {Li, W. and Claassen, M. and Chang, Cui -Zu and Moritz, B. and Jia, T. and Zhang, C. and Rebec, S. and Lee, J. J. and Hashimoto, M. and Lu, D. -H. and Moore, R. G. and Moodera, J. S. and Devereaux, T. P. and Shen, Z. -X.},
abstractNote = {The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)2Te3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Finally, our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.},
doi = {10.1038/srep32732},
journal = {Scientific Reports},
number = 1,
volume = 6,
place = {United States},
year = {2016},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Topological field theory of time-reversal invariant insulators
journal, November 2008

  • Qi, Xiao-Liang; Hughes, Taylor L.; Zhang, Shou-Cheng
  • Physical Review B, Vol. 78, Issue 19, Article No. 195424
  • DOI: 10.1103/PhysRevB.78.195424

Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3
journal, June 2009


Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
journal, May 2009

  • Xia, Y.; Qian, D.; Hsieh, D.
  • Nature Physics, Vol. 5, Issue 6, p. 398-402
  • DOI: 10.1038/nphys1274

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
journal, May 2009

  • Zhang, Haijun; Liu, Chao-Xing; Qi, Xiao-Liang
  • Nature Physics, Vol. 5, Issue 6, p. 438-442
  • DOI: 10.1038/nphys1270