Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film

Abstract

The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)2Te3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Finally, our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.

Authors:
 [1];  [1];  [2];  [1];  [3];  [1];  [3];  [3];  [4];  [4];  [1];  [2];  [3];  [3]
+ Show Author Affiliations
  1. SLAC National Accelerator Lab. and Stanford Univ., Menlo Park, CA (United States)
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  3. SLAC National Accelerator Lab. and Stanford Univ., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1346529
Report Number(s):
SLAC-PUB-16816
Journal ID: ISSN 2045-2322; TRN: US1701661
Grant/Contract Number:  
AC02-76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; SYNCHRAD; condensed-matter physics

Citation Formats

Li, W., Claassen, M., Chang, Cui -Zu, Moritz, B., Jia, T., Zhang, C., Rebec, S., Lee, J. J., Hashimoto, M., Lu, D. -H., Moore, R. G., Moodera, J. S., Devereaux, T. P., and Shen, Z. -X. Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film. United States: N. p., 2016. Web. doi:10.1038/srep32732.
Copy to clipboard
Li, W., Claassen, M., Chang, Cui -Zu, Moritz, B., Jia, T., Zhang, C., Rebec, S., Lee, J. J., Hashimoto, M., Lu, D. -H., Moore, R. G., Moodera, J. S., Devereaux, T. P., & Shen, Z. -X. Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film. United States. https://doi.org/10.1038/srep32732
Copy to clipboard
Li, W., Claassen, M., Chang, Cui -Zu, Moritz, B., Jia, T., Zhang, C., Rebec, S., Lee, J. J., Hashimoto, M., Lu, D. -H., Moore, R. G., Moodera, J. S., Devereaux, T. P., and Shen, Z. -X. Wed . "Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film". United States. https://doi.org/10.1038/srep32732. https://www.osti.gov/servlets/purl/1346529.
Copy to clipboard
@article{osti_1346529,
title = {Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film},
author = {Li, W. and Claassen, M. and Chang, Cui -Zu and Moritz, B. and Jia, T. and Zhang, C. and Rebec, S. and Lee, J. J. and Hashimoto, M. and Lu, D. -H. and Moore, R. G. and Moodera, J. S. and Devereaux, T. P. and Shen, Z. -X.},
abstractNote = {The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)2Te3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Finally, our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.},
doi = {10.1038/srep32732},
journal = {Scientific Reports},
number = 1,
volume = 6,
place = {United States},
year = {Wed Sep 07 00:00:00 EDT 2016},
month = {Wed Sep 07 00:00:00 EDT 2016}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1038/srep32732
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 26 works
Citation information provided by
Web of Science
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
journal, March 2015

  • Chang, Cui-Zu; Zhao, Weiwei; Kim, Duk Y.
  • Nature Materials, Vol. 14, Issue 5
  • DOI: 10.1038/nmat4204

Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
journal, March 2013

Quantum Anomalous Hall Effect in Hg 1 − y Mn y Te Quantum Wells
journal, October 2008

Scale-Invariant Quantum Anomalous Hall Effect in Magnetic Topological Insulators beyond the Two-Dimensional Limit
journal, September 2014

Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3
journal, June 2009

Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
journal, May 2009

  • Xia, Y.; Qian, D.; Hsieh, D.
  • Nature Physics, Vol. 5, Issue 6, p. 398-402
  • DOI: 10.1038/nphys1274

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
journal, May 2009

  • Zhang, Haijun; Liu, Chao-Xing; Qi, Xiao-Liang
  • Nature Physics, Vol. 5, Issue 6, p. 438-442
  • DOI: 10.1038/nphys1270

Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning
journal, October 2011

  • Kong, Desheng; Chen, Yulin; Cha, Judy J.
  • Nature Nanotechnology, Vol. 6, Issue 11
  • DOI: 10.1038/nnano.2011.172

Surface edge state and half-quantized Hall conductance in topological insulators
journal, August 2011

Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect
journal, November 2015

  • Mogi, M.; Yoshimi, R.; Tsukazaki, A.
  • Applied Physics Letters, Vol. 107, Issue 18
  • DOI: 10.1063/1.4935075

Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors
journal, August 2006

Topological field theory of time-reversal invariant insulators
journal, November 2008

  • Qi, Xiao-Liang; Hughes, Taylor L.; Zhang, Shou-Cheng
  • Physical Review B, Vol. 78, Issue 19, Article No. 195424
  • DOI: 10.1103/PhysRevB.78.195424

Surface-Quantized Anomalous Hall Current and the Magnetoelectric Effect in Magnetically Disordered Topological Insulators
journal, April 2011

Anomalous Edge Transport in the Quantum Anomalous Hall State
journal, August 2013

Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties
journal, April 2016

  • Kushwaha, S. K.; Pletikosić, I.; Liang, T.
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms11456

Precise Quantization of the Anomalous Hall Effect near Zero Magnetic Field
journal, May 2015

Quantized Anomalous Hall Effect in Magnetic Topological Insulators
journal, June 2010

Zero-Field Dissipationless Chiral Edge Transport and the Nature of Dissipation in the Quantum Anomalous Hall State
journal, July 2015

Anomalous Hall effect
journal, May 2010

Trajectory of the anomalous Hall effect towards the quantized state in a ferromagnetic topological insulator
journal, August 2014

  • Checkelsky, J. G.; Yoshimi, R.; Tsukazaki, A.
  • Nature Physics, Vol. 10, Issue 10
  • DOI: 10.1038/nphys3053

Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties
journal, April 2016

  • Kushwaha, S. K.; Pletikosić, I.; Liang, T.
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms11456

Competition between Weak Localization and Antilocalization in Topological Surface States
journal, August 2011

Quantized Anomalous Hall Effect in Two-Dimensional Ferromagnets: Quantum Hall Effect in Metals
journal, May 2003

Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3
journal, June 2009

Quantized Anomalous Hall Effect in Magnetic Topological Insulators
journal, June 2010

Precise quantization of anomalous Hall effect near zero magnetic field
text, January 2014

    Sort by:
    [ × clear filter / sort ]

    Works referencing / citing this record:

    Enhancing the Quantum Anomalous Hall Effect by Magnetic Codoping in a Topological Insulator
    journal, November 2017

    Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes
    journal, October 2019

    Direct evidence of ferromagnetism in a quantum anomalous Hall system
    journal, May 2018

    Fermi-level tuning of the Dirac surface state in (Bi 1− x Sb x ) 2 Se 3 thin films
    journal, February 2018

    • Satake, Yosuke; Shiogai, Junichi; Takane, Daichi
    • Journal of Physics: Condensed Matter, Vol. 30, Issue 8
    • DOI: 10.1088/1361-648x/aaa724

    Spin- and angle-resolved photoemission on topological materials
    journal, April 2019

    Part-per-million quantization and current-induced breakdown of the quantum anomalous Hall effect
    journal, August 2018

    Current-Driven Instability of the Quantum Anomalous Hall Effect in Ferromagnetic Topological Insulators
    journal, July 2017

    Chiral Spin Mode on the Surface of a Topological Insulator
    journal, September 2017

    Photon energy and polarization-dependent electronic structure of Cr-doped Bi 2 Se 3
    journal, February 2020

    Current-driven instability of quantum anomalous Hall effect in ferromagnetic topological insulators
    text, January 2017

    Chiral Spin Mode on the Surface of a Topological Insulator
    text, January 2017

    Direct evidence of ferromagnetism in a quantum anomalous Hall system
    text, January 2018

      Sort by:
      [ × clear filter / sort ]

      Similar Records in DOE PAGES and OSTI.GOV collections: