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Title: Enhanced dielectric and piezoelectric responses in Zn1-xMgxO thin films near the phase separation boundary

Abstract

Dielectric and piezoelectric properties for Zn1-xMgxO (ZMO) thin films are reported as a function of MgO composition up to and including the phase separation region. Zn1-xMgxO (0.25 ≤ x ≤ 0.5) thin films with c-axis textures were deposited by pulsed laser deposition on platinized sapphire substrates. The films were phase pure wurtzite for MgO concentrations up to 40%; above that limit, a second phase with rocksalt structure evolves with strong {100} texture. With increasing MgO concentration, the out-of-plane (d33,f) and in-plane (e31,f) piezoelectric coefficients increase by 360% and 290%, respectively. The increase in piezoelectric coefficients is accompanied by a 35% increase in relative permittivity. Loss tangent values fall monotonically with increasing MgO concentration, reaching a minimum of 0.001 for x ≥ 0.30, at which point the band gap is reported to be 4 eV. As a result, the enhanced piezoelectric response, the large band gap, and the low dielectric loss make Zn1-xMgxO an interesting candidate for thin film piezoelectric devices, and demonstrate that compositional phase transformations provide opportunities for property engineering.

Authors:
 [1];  [2];  [2];  [3];  [2];  [1]
  1. North Carolina State Univ., Raleigh, NC (United States)
  2. Pennsylvania State Univ., University Park, PA (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1346412
Report Number(s):
SAND-2017-2113J
Journal ID: ISSN 0003-6951; 651146; TRN: US1700950
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 4; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Kang, Xiaoyu, Shetty, Smitha, Garten, Lauren, Ihlefeld, Jon F., Trolier-McKinstry, Susan, and Maria, Jon -Paul. Enhanced dielectric and piezoelectric responses in Zn1-xMgxO thin films near the phase separation boundary. United States: N. p., 2017. Web. doi:10.1063/1.4973756.
Kang, Xiaoyu, Shetty, Smitha, Garten, Lauren, Ihlefeld, Jon F., Trolier-McKinstry, Susan, & Maria, Jon -Paul. Enhanced dielectric and piezoelectric responses in Zn1-xMgxO thin films near the phase separation boundary. United States. https://doi.org/10.1063/1.4973756
Kang, Xiaoyu, Shetty, Smitha, Garten, Lauren, Ihlefeld, Jon F., Trolier-McKinstry, Susan, and Maria, Jon -Paul. Mon . "Enhanced dielectric and piezoelectric responses in Zn1-xMgxO thin films near the phase separation boundary". United States. https://doi.org/10.1063/1.4973756. https://www.osti.gov/servlets/purl/1346412.
@article{osti_1346412,
title = {Enhanced dielectric and piezoelectric responses in Zn1-xMgxO thin films near the phase separation boundary},
author = {Kang, Xiaoyu and Shetty, Smitha and Garten, Lauren and Ihlefeld, Jon F. and Trolier-McKinstry, Susan and Maria, Jon -Paul},
abstractNote = {Dielectric and piezoelectric properties for Zn1-xMgxO (ZMO) thin films are reported as a function of MgO composition up to and including the phase separation region. Zn1-xMgxO (0.25 ≤ x ≤ 0.5) thin films with c-axis textures were deposited by pulsed laser deposition on platinized sapphire substrates. The films were phase pure wurtzite for MgO concentrations up to 40%; above that limit, a second phase with rocksalt structure evolves with strong {100} texture. With increasing MgO concentration, the out-of-plane (d33,f) and in-plane (e31,f) piezoelectric coefficients increase by 360% and 290%, respectively. The increase in piezoelectric coefficients is accompanied by a 35% increase in relative permittivity. Loss tangent values fall monotonically with increasing MgO concentration, reaching a minimum of 0.001 for x ≥ 0.30, at which point the band gap is reported to be 4 eV. As a result, the enhanced piezoelectric response, the large band gap, and the low dielectric loss make Zn1-xMgxO an interesting candidate for thin film piezoelectric devices, and demonstrate that compositional phase transformations provide opportunities for property engineering.},
doi = {10.1063/1.4973756},
journal = {Applied Physics Letters},
number = 4,
volume = 110,
place = {United States},
year = {Mon Jan 23 00:00:00 EST 2017},
month = {Mon Jan 23 00:00:00 EST 2017}
}

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Works referencing / citing this record:

Enhanced piezoelectric response of AlN via CrN alloying
text, January 2017