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Title: Spin-polarized current injection induced magnetic reconstruction at oxide interface

Electrical manipulation of magnetism presents a promising way towards using the spin degree of freedom in very fast, low-power electronic devices. Though there has been tremendous progress in electrical control of magnetic properties using ferromagnetic (FM) nanostructures, an opportunity of manipulating antiferromagnetic (AFM) states should offer another route for creating a broad range of new enabling technologies. Here we selectively probe the interface magnetization of SrTiO 3/La 0.5Ca 0.5MnO 3/La 0.7Sr 0.3MnO 3 heterojunctions and discover a new spin-polarized current injection induced interface magnetoelectric (ME) effect. The accumulation of majority spins at the interface causes a sudden, reversible transition of the spin alignment of interfacial Mn ions from AFM to FM exchange-coupled, while the injection of minority electron spins alters the interface magnetization from C-type to A-type AFM state. In contrast, the bulk magnetization remains unchanged. We attribute the current-induced interface ME effect to modulations of the strong double-exchange interaction between conducting electron spins and local magnetic moments. As a result, the effect is robust and may serve as a viable route for electronic and spintronic applications.
 [1] ;  [2] ;  [2] ;  [1]
  1. College of William and Mary, Williamsburg, VA (United States)
  2. Pennsylvania State Univ., University Park, PA (United States)
Publication Date:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2045-2322
Nature Publishing Group
Research Org:
College of William and Mary, Williamsburg, VA (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; magnetic properties and materials; surfaces, interfaces and thin films
OSTI Identifier: