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Title: Superconductivity bordering Rashba type topological transition

Abstract

Strong spin orbital interaction (SOI) can induce unique quantum phenomena such as topological insulators, the Rashba effect, or p-wave superconductivity. Combining these three quantum phenomena into a single compound has important scientific implications. Here we report experimental observations of consecutive quantum phase transitions from a Rashba type topological trivial phase to topological insulator state then further proceeding to superconductivity in a SOI compound BiTeI tuned via pressures. The electrical resistivity measurement with V shape change signals the transition from a Rashba type topological trivial to a topological insulator phase at 2 GPa, which is caused by an energy gap close then reopen with band inverse. Superconducting transition appears at 8 GPa with a critical temperature TC of 5.3 K. Structure refinements indicate that the consecutive phase transitions are correlated to the changes in the Bi–Te bond and bond angle as function of pressures. As a result, the Hall Effect measurements reveal an intimate relationship between superconductivity and the unusual change in carrier density that points to possible unconventional superconductivity.

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [1];  [1];  [3];  [1];  [1];  [1];  [1];  [4];  [5];  [6];  [4];  [7]
+ Show Author Affiliations
  1. Chinese Academy of Sciences (CAS), Beijing (China)
  2. Chinese Academy of Sciences (CAS), Beijing (China); Center for High Pressure Science & Technology Advanced Research (HPSTAR), Shanghai (China)
  3. Univ. of Nevada, Las Vegas, NV (United States)
  4. Carnegie Institution of Washington, Argonne, IL (United States); Center for High Pressure Science & Technology Advanced Research (HPSTAR), Shanghai (China)
  5. Carnegie Institution of Washington, Argonne, IL (United States)
  6. Chinese Academy of Sciences (CAS), Beijing (China); Univ. of Nevada, Las Vegas, NV (United States)
  7. Chinese Academy of Sciences (CAS), Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Univ. of Chinese Academy of Sciences, Beijing (China)
Publication Date:
Research Org.:
Carnegie Inst. of Science, Argonne, IL (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1346003
Grant/Contract Number:  
NA0001974
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; superconducting properties and materials; topological insulators

Citation Formats

Jin, M. L., Sun, F., Xing, L. Y., Zhang, S. J., Feng, S. M., Kong, P. P., Li, W. M., Wang, X. C., Zhu, J. L., Long, Y. W., Bai, H. Y., Gu, C. Z., Yu, R. C., Yang, W. G., Shen, G. Y., Zhao, Y. S., Mao, H. K., and Jin, C. Q. Superconductivity bordering Rashba type topological transition. United States: N. p., 2017. Web. doi:10.1038/srep39699.
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Jin, M. L., Sun, F., Xing, L. Y., Zhang, S. J., Feng, S. M., Kong, P. P., Li, W. M., Wang, X. C., Zhu, J. L., Long, Y. W., Bai, H. Y., Gu, C. Z., Yu, R. C., Yang, W. G., Shen, G. Y., Zhao, Y. S., Mao, H. K., & Jin, C. Q. Superconductivity bordering Rashba type topological transition. United States. https://doi.org/10.1038/srep39699
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Jin, M. L., Sun, F., Xing, L. Y., Zhang, S. J., Feng, S. M., Kong, P. P., Li, W. M., Wang, X. C., Zhu, J. L., Long, Y. W., Bai, H. Y., Gu, C. Z., Yu, R. C., Yang, W. G., Shen, G. Y., Zhao, Y. S., Mao, H. K., and Jin, C. Q. Wed . "Superconductivity bordering Rashba type topological transition". United States. https://doi.org/10.1038/srep39699. https://www.osti.gov/servlets/purl/1346003.
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@article{osti_1346003,
title = {Superconductivity bordering Rashba type topological transition},
author = {Jin, M. L. and Sun, F. and Xing, L. Y. and Zhang, S. J. and Feng, S. M. and Kong, P. P. and Li, W. M. and Wang, X. C. and Zhu, J. L. and Long, Y. W. and Bai, H. Y. and Gu, C. Z. and Yu, R. C. and Yang, W. G. and Shen, G. Y. and Zhao, Y. S. and Mao, H. K. and Jin, C. Q.},
abstractNote = {Strong spin orbital interaction (SOI) can induce unique quantum phenomena such as topological insulators, the Rashba effect, or p-wave superconductivity. Combining these three quantum phenomena into a single compound has important scientific implications. Here we report experimental observations of consecutive quantum phase transitions from a Rashba type topological trivial phase to topological insulator state then further proceeding to superconductivity in a SOI compound BiTeI tuned via pressures. The electrical resistivity measurement with V shape change signals the transition from a Rashba type topological trivial to a topological insulator phase at 2 GPa, which is caused by an energy gap close then reopen with band inverse. Superconducting transition appears at 8 GPa with a critical temperature TC of 5.3 K. Structure refinements indicate that the consecutive phase transitions are correlated to the changes in the Bi–Te bond and bond angle as function of pressures. As a result, the Hall Effect measurements reveal an intimate relationship between superconductivity and the unusual change in carrier density that points to possible unconventional superconductivity.},
doi = {10.1038/srep39699},
journal = {Scientific Reports},
number = ,
volume = 7,
place = {United States},
year = {Wed Jan 04 00:00:00 EST 2017},
month = {Wed Jan 04 00:00:00 EST 2017}
}
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    Works referencing / citing this record:

    Fermi level tuning of Ag-doped Bi2Se3 topological insulator
    journal, March 2019

    Fermi level tuning of Ag-doped Bi2Se3 topological insulator
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