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Title: Imaging the in-plane distribution of helium precipitates at a Cu/V interface

Here, we describe a transmission electron microscopy investigation of the distribution of helium precipitates within the plane of an interface between Cu and V. Statistical analysis of precipitate locations reveals a weak tendency for interfacial precipitates to align along $$\langle$$110$$\rangle$$-type crystallographic directions within the Cu layer. Comparison of these findings with helium-free Cu/V interfaces suggests that the precipitates may be aggregating preferentially along atomic-size steps in the interface created by threading dislocations in the Cu layer. Our observations also suggest that some precipitates may be aggregating along intersections between interfacial misfit dislocations.
Authors:
ORCiD logo [1] ; ORCiD logo [1] ;  [2] ;  [1] ; ORCiD logo [1] ;  [3] ; ORCiD logo [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  3. Texas A & M Univ., College Station, TX (United States)
Publication Date:
Report Number(s):
LA-UR-16-29316
Journal ID: ISSN 2166-3831
Grant/Contract Number:
AC52-06NA25396
Type:
Accepted Manuscript
Journal Name:
Materials Research Letters
Additional Journal Information:
Journal Volume: 5; Journal Issue: 5; Journal ID: ISSN 2166-3831
Publisher:
Taylor and Francis
Research Org:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; helium precipitates; interfaces; physical vapor deposition; ion implantation; metal nanocomposites
OSTI Identifier:
1345945