Controlling n -Type Doping in MoO 3
Abstract
Here, we study the electronic properties of native defects and intentional dopant impurities in MoO3, a widely used transparent conductor. Using first-principles hybrid functional calculations, we show that electron polarons can be self-trapped, but they can also bind to defects; thus, they play an important role in understanding the properties of doped MoO3. Our calculations show that oxygen vacancies can cause unintentional n-type doping in MoO3. Mo vacancies are unlikely to form. Tc and Re impurities on the Mo site and halogens (F, Cl, and Br) on the O site all act as shallow donors but trap electron polarons. Fe, Ru, and Os impurities are amphoteric and will compensate n-type MoO3. Mn dopants are also amphoteric, and they show interesting magnetic properties. These results support the design of doping approaches that optimally exploit functionality.
- Authors:
-
- Materials Department, University of California, Santa Barbara, California 93106-5050, United States
- Publication Date:
- Research Org.:
- Univ. of California, Santa Barbara, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1345683
- Alternate Identifier(s):
- OSTI ID: 1351626
- Grant/Contract Number:
- FG02-07ER46434
- Resource Type:
- Published Article
- Journal Name:
- Chemistry of Materials
- Additional Journal Information:
- Journal Name: Chemistry of Materials Journal Volume: 29 Journal Issue: 6; Journal ID: ISSN 0897-4756
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Peelaers, H., Chabinyc, M. L., and Van de Walle, C. G. Controlling n -Type Doping in MoO 3. United States: N. p., 2017.
Web. doi:10.1021/acs.chemmater.6b04479.
Peelaers, H., Chabinyc, M. L., & Van de Walle, C. G. Controlling n -Type Doping in MoO 3. United States. https://doi.org/10.1021/acs.chemmater.6b04479
Peelaers, H., Chabinyc, M. L., and Van de Walle, C. G. Mon .
"Controlling n -Type Doping in MoO 3". United States. https://doi.org/10.1021/acs.chemmater.6b04479.
@article{osti_1345683,
title = {Controlling n -Type Doping in MoO 3},
author = {Peelaers, H. and Chabinyc, M. L. and Van de Walle, C. G.},
abstractNote = {Here, we study the electronic properties of native defects and intentional dopant impurities in MoO3, a widely used transparent conductor. Using first-principles hybrid functional calculations, we show that electron polarons can be self-trapped, but they can also bind to defects; thus, they play an important role in understanding the properties of doped MoO3. Our calculations show that oxygen vacancies can cause unintentional n-type doping in MoO3. Mo vacancies are unlikely to form. Tc and Re impurities on the Mo site and halogens (F, Cl, and Br) on the O site all act as shallow donors but trap electron polarons. Fe, Ru, and Os impurities are amphoteric and will compensate n-type MoO3. Mn dopants are also amphoteric, and they show interesting magnetic properties. These results support the design of doping approaches that optimally exploit functionality.},
doi = {10.1021/acs.chemmater.6b04479},
journal = {Chemistry of Materials},
number = 6,
volume = 29,
place = {United States},
year = {Mon Mar 06 00:00:00 EST 2017},
month = {Mon Mar 06 00:00:00 EST 2017}
}
https://doi.org/10.1021/acs.chemmater.6b04479
Web of Science
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