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Title: High thermoelectric performance of n-type PbTe1−S due to deep lying states induced by indium doping and spinodal decomposition

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Grant/Contract Number:
SC0001299
Type:
Publisher's Accepted Manuscript
Journal Name:
Nano Energy
Additional Journal Information:
Journal Volume: 22; Journal Issue: C; Related Information: CHORUS Timestamp: 2018-09-14 12:51:15; Journal ID: ISSN 2211-2855
Publisher:
Elsevier
Sponsoring Org:
USDOE
Country of Publication:
Netherlands
Language:
English
OSTI Identifier:
1345545

Zhang, Qian, Chere, Eyob Kebede, Wang, Yumei, Kim, Hee Seok, He, Ran, Cao, Feng, Dahal, Keshab, Broido, David, Chen, Gang, and Ren, Zhifeng. High thermoelectric performance of n-type PbTe1−S due to deep lying states induced by indium doping and spinodal decomposition. Netherlands: N. p., Web. doi:10.1016/j.nanoen.2016.02.040.
Zhang, Qian, Chere, Eyob Kebede, Wang, Yumei, Kim, Hee Seok, He, Ran, Cao, Feng, Dahal, Keshab, Broido, David, Chen, Gang, & Ren, Zhifeng. High thermoelectric performance of n-type PbTe1−S due to deep lying states induced by indium doping and spinodal decomposition. Netherlands. doi:10.1016/j.nanoen.2016.02.040.
Zhang, Qian, Chere, Eyob Kebede, Wang, Yumei, Kim, Hee Seok, He, Ran, Cao, Feng, Dahal, Keshab, Broido, David, Chen, Gang, and Ren, Zhifeng. 2016. "High thermoelectric performance of n-type PbTe1−S due to deep lying states induced by indium doping and spinodal decomposition". Netherlands. doi:10.1016/j.nanoen.2016.02.040.
@article{osti_1345545,
title = {High thermoelectric performance of n-type PbTe1−S due to deep lying states induced by indium doping and spinodal decomposition},
author = {Zhang, Qian and Chere, Eyob Kebede and Wang, Yumei and Kim, Hee Seok and He, Ran and Cao, Feng and Dahal, Keshab and Broido, David and Chen, Gang and Ren, Zhifeng},
abstractNote = {},
doi = {10.1016/j.nanoen.2016.02.040},
journal = {Nano Energy},
number = C,
volume = 22,
place = {Netherlands},
year = {2016},
month = {4}
}