skip to main content

DOE PAGESDOE PAGES

Title: Unveiling interfaces between In-rich and Ga-rich GaInP vertical slabs of laterally composition modulated structures

Here, we report changes at the interface between Ga-rich/In-rich GaInP vertical slabs in laterally composition modulated (LCM) GaInP as a function of the V/III ratio. The photoluminescence exhibits satellite peaks, indicating that the parasitic potential between the GaInP vertical slabs disappears as the V/III ratio decreases. However, a high V/III ratio leads to an abrupt interface, increasing the parasitic potential because of the phosphorus-amount-dependent diffusion of group-III atoms during growth. These results suggest that the V/III ratio is an important parameter that must be wisely chosen in designing optoelectronic devices incorporating LCM structure.
Authors:
 [1] ;  [2] ;  [3] ;  [2] ;  [2]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Gwangju Institute of Science and Technology, Gwangju (Republic of Korea)
  3. Indian Institute of Space and Technology, Trivandrum (India)
Publication Date:
Report Number(s):
NREL/JA-5K00-68032
Journal ID: ISSN 1882-0778
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
Applied Physics Express
Additional Journal Information:
Journal Volume: 10; Journal Issue: 2; Journal ID: ISSN 1882-0778
Publisher:
Japan Society of Applied Physics
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; optoelectronic devices; interfaces; laterally composition modulated; LCM
OSTI Identifier:
1345117