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Title: Direct Time-Domain View of Auger Recombination in a Semiconductor

Authors:
; ; ;
Publication Date:
Grant/Contract Number:
SC0014563
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 118 Journal Issue: 8; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1344956

Williams, Kristopher W., Monahan, Nicholas R., Evans, Tyler J. S., and Zhu, X. -Y.. Direct Time-Domain View of Auger Recombination in a Semiconductor. United States: N. p., Web. doi:10.1103/PhysRevLett.118.087402.
Williams, Kristopher W., Monahan, Nicholas R., Evans, Tyler J. S., & Zhu, X. -Y.. Direct Time-Domain View of Auger Recombination in a Semiconductor. United States. doi:10.1103/PhysRevLett.118.087402.
Williams, Kristopher W., Monahan, Nicholas R., Evans, Tyler J. S., and Zhu, X. -Y.. 2017. "Direct Time-Domain View of Auger Recombination in a Semiconductor". United States. doi:10.1103/PhysRevLett.118.087402.
@article{osti_1344956,
title = {Direct Time-Domain View of Auger Recombination in a Semiconductor},
author = {Williams, Kristopher W. and Monahan, Nicholas R. and Evans, Tyler J. S. and Zhu, X. -Y.},
abstractNote = {},
doi = {10.1103/PhysRevLett.118.087402},
journal = {Physical Review Letters},
number = 8,
volume = 118,
place = {United States},
year = {2017},
month = {2}
}

Works referenced in this record:

Efficiency droop in nitride-based light-emitting diodes
journal, July 2010

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001
  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156