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Title: Lateral epitaxy of atomically sharp WSe 2/WS 2 heterojunctions on silicon dioxide substrates

Here, in recent years, 2-D transition-metal dichalcogenides (TMDCs) have received great interests because of the broader possibilities offered by their tunable band gaps, as opposed to gapless graphene which precludes application in digital electronics. TMDCs exhibit an indirect-to-direct band gap transition at the single atomic sheet state as well as optically accessible spin degree of freedom in valleytronics.
Authors:
 [1] ;  [2] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. National Univ. of Singapore (Singapore)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Chinese Academy of Sciences, Beijing (China)
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
Chemistry of Materials
Additional Journal Information:
Journal Volume: 28; Journal Issue: 20; Journal ID: ISSN 0897-4756
Publisher:
American Chemical Society (ACS)
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1344284

Chen, Jianyi, Zhou, Wu, Tang, Wei, Tian, Bingbing, Zhao, Xiaoxu, Xu, Hai, Liu, Yanpeng, Geng, Dechao, Tan, Sherman Jun Rong, Fu, Wei, and Loh, Kian Ping. Lateral epitaxy of atomically sharp WSe2/WS2 heterojunctions on silicon dioxide substrates. United States: N. p., Web. doi:10.1021/acs.chemmater.6b03639.
Chen, Jianyi, Zhou, Wu, Tang, Wei, Tian, Bingbing, Zhao, Xiaoxu, Xu, Hai, Liu, Yanpeng, Geng, Dechao, Tan, Sherman Jun Rong, Fu, Wei, & Loh, Kian Ping. Lateral epitaxy of atomically sharp WSe2/WS2 heterojunctions on silicon dioxide substrates. United States. doi:10.1021/acs.chemmater.6b03639.
Chen, Jianyi, Zhou, Wu, Tang, Wei, Tian, Bingbing, Zhao, Xiaoxu, Xu, Hai, Liu, Yanpeng, Geng, Dechao, Tan, Sherman Jun Rong, Fu, Wei, and Loh, Kian Ping. 2016. "Lateral epitaxy of atomically sharp WSe2/WS2 heterojunctions on silicon dioxide substrates". United States. doi:10.1021/acs.chemmater.6b03639. https://www.osti.gov/servlets/purl/1344284.
@article{osti_1344284,
title = {Lateral epitaxy of atomically sharp WSe2/WS2 heterojunctions on silicon dioxide substrates},
author = {Chen, Jianyi and Zhou, Wu and Tang, Wei and Tian, Bingbing and Zhao, Xiaoxu and Xu, Hai and Liu, Yanpeng and Geng, Dechao and Tan, Sherman Jun Rong and Fu, Wei and Loh, Kian Ping},
abstractNote = {Here, in recent years, 2-D transition-metal dichalcogenides (TMDCs) have received great interests because of the broader possibilities offered by their tunable band gaps, as opposed to gapless graphene which precludes application in digital electronics. TMDCs exhibit an indirect-to-direct band gap transition at the single atomic sheet state as well as optically accessible spin degree of freedom in valleytronics.},
doi = {10.1021/acs.chemmater.6b03639},
journal = {Chemistry of Materials},
number = 20,
volume = 28,
place = {United States},
year = {2016},
month = {9}
}