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Title: First-principles mode-by-mode analysis for electron-phonon scattering channels and mean free path spectra in GaAs

Authors:
; ; ; ;
Publication Date:
Grant/Contract Number:
FG02-09ER46577; SC0001299
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 95 Journal Issue: 7; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1344135

Liu, Te-Huan, Zhou, Jiawei, Liao, Bolin, Singh, David J., and Chen, Gang. First-principles mode-by-mode analysis for electron-phonon scattering channels and mean free path spectra in GaAs. United States: N. p., Web. doi:10.1103/PhysRevB.95.075206.
Liu, Te-Huan, Zhou, Jiawei, Liao, Bolin, Singh, David J., & Chen, Gang. First-principles mode-by-mode analysis for electron-phonon scattering channels and mean free path spectra in GaAs. United States. doi:10.1103/PhysRevB.95.075206.
Liu, Te-Huan, Zhou, Jiawei, Liao, Bolin, Singh, David J., and Chen, Gang. 2017. "First-principles mode-by-mode analysis for electron-phonon scattering channels and mean free path spectra in GaAs". United States. doi:10.1103/PhysRevB.95.075206.
@article{osti_1344135,
title = {First-principles mode-by-mode analysis for electron-phonon scattering channels and mean free path spectra in GaAs},
author = {Liu, Te-Huan and Zhou, Jiawei and Liao, Bolin and Singh, David J. and Chen, Gang},
abstractNote = {},
doi = {10.1103/PhysRevB.95.075206},
journal = {Physical Review B},
number = 7,
volume = 95,
place = {United States},
year = {2017},
month = {2}
}

Works referenced in this record:

Electrons in lattice fields
journal, July 1954

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
journal, September 2009
  • Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola
  • Journal of Physics: Condensed Matter, Vol. 21, Issue 39, Article No. 395502
  • DOI: 10.1088/0953-8984/21/39/395502

Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
journal, August 1996
  • Fischetti, M. V.; Laux, S. E.
  • Journal of Applied Physics, Vol. 80, Issue 4, p. 2234-2252
  • DOI: 10.1063/1.363052