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Title: Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si

High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot lasers grown on on-axis (001) Si patterned with {111} v-grooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-in-a-well layers. Here, we achieve continuous wave lasing with thresholds as low as 36 mA and operation up to 80°C.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [3] ;  [1] ;  [1] ;  [1] ;  [1] ;  [3] ;  [1] ;  [4]
  1. Univ. of California, Santa Barbara, CA (United States). Dept. of Materials
  2. Univ. of California, Santa Barbara, CA (United States). Dept. of Electrical and Computer Engineering
  3. Hong Kong Univ. of Science and Technology, Hong Kong (China). Dept. of Electronic and Computer Engineering
  4. Univ. of California, Santa Barbara, CA (United States). Dept. of Materials; Univ. of California, Santa Barbara, CA (United States). Dept. of Electrical and Computer Engineering
Publication Date:
Grant/Contract Number:
AR0000672; 16212115
Type:
Accepted Manuscript
Journal Name:
Optics Express
Additional Journal Information:
Journal Volume: 25; Journal Issue: 4; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America (OSA)
Research Org:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY
OSTI Identifier:
1343617

Norman, Justin, Kennedy, M. J., Selvidge, Jennifer, Li, Qiang, Wan, Yating, Liu, Alan Y., Callahan, Patrick G., Echlin, McLean P., Pollock, Tresa M., Lau, Kei May, Gossard, Arthur C., and Bowers, John E.. Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si. United States: N. p., Web. doi:10.1364/OE.25.003927.
Norman, Justin, Kennedy, M. J., Selvidge, Jennifer, Li, Qiang, Wan, Yating, Liu, Alan Y., Callahan, Patrick G., Echlin, McLean P., Pollock, Tresa M., Lau, Kei May, Gossard, Arthur C., & Bowers, John E.. Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si. United States. doi:10.1364/OE.25.003927.
Norman, Justin, Kennedy, M. J., Selvidge, Jennifer, Li, Qiang, Wan, Yating, Liu, Alan Y., Callahan, Patrick G., Echlin, McLean P., Pollock, Tresa M., Lau, Kei May, Gossard, Arthur C., and Bowers, John E.. 2017. "Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si". United States. doi:10.1364/OE.25.003927. https://www.osti.gov/servlets/purl/1343617.
@article{osti_1343617,
title = {Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si},
author = {Norman, Justin and Kennedy, M. J. and Selvidge, Jennifer and Li, Qiang and Wan, Yating and Liu, Alan Y. and Callahan, Patrick G. and Echlin, McLean P. and Pollock, Tresa M. and Lau, Kei May and Gossard, Arthur C. and Bowers, John E.},
abstractNote = {High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot lasers grown on on-axis (001) Si patterned with {111} v-grooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-in-a-well layers. Here, we achieve continuous wave lasing with thresholds as low as 36 mA and operation up to 80°C.},
doi = {10.1364/OE.25.003927},
journal = {Optics Express},
number = 4,
volume = 25,
place = {United States},
year = {2017},
month = {2}
}