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Title: Effects of Negative-Bias-Temperature-Instability on Low-Frequency Noise in SiGe $${p}$$ MOSFETs

In this paper, we have measured the low-frequency 1/f noise of Si 0.55Ge 0.45 pMOSFETs with a Si capping layer and SiO 2/HfO 2/TiN gate stack as a function of frequency, gate voltage, and temperature (100-440 K). The magnitude of the excess drain voltage noise power spectral density (Svd) is unaffected by negative-bias-temperature stress (NBTS) for temperatures below ~250 K, but increases significantly at higher temperatures. The noise is described well by the Dutta-Horn model before and after NBTS. The noise at higher measuring temperatures is attributed primarily to oxygen-vacancy and hydrogen-related defects in the SiO 2 and HfO 2 layers. Finally, at lower measuring temperatures, the noise also appears to be affected strongly by hydrogen-dopant interactions in the SiGe layer of the device.
Authors:
ORCiD logo [1] ;  [2] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [3] ;  [3] ;  [3] ;  [3] ;  [3] ;  [3] ;  [4] ;  [5]
  1. Vanderbilt Univ., Nashville, TN (United States). Electrical Engineering and Computer Science Dept.
  2. Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy
  3. Interuniversity Microelectronics Centre (IMEC), Leuven (Belgium)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  5. Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy; Electrical Engineering and Computer Science Dept.
Publication Date:
Grant/Contract Number:
FG02-09ER46554; ECCS-1508898
Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Device and Materials Reliability
Additional Journal Information:
Journal Volume: 16; Journal Issue: 4; Journal ID: ISSN 1530-4388
Publisher:
IEEE
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); US Air Force Office of Scientific Research (AFOSR); Defense Threat Reduction Agency (DTRA) (United States); National Science Foundation (NSF)
Contributing Orgs:
Interuniversity Microelectronics Centre (IMEC), Leuven (Belgium)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SiGe; HfO2; NBTI; oxygen vacancy defects; 1/f noise; defect energy distribution; relaxation-assisted transitions
OSTI Identifier:
1343536