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Title: Nano-XRF Analysis of Metal Impurities Distribution at PL Active Grain Boundaries During mc-Silicon Solar Cell Processing

Abstract

Metal impurities are known to hinder the performance of commercial Si-based solar cells by inducing bulk recombination, increasing leakage current, and causing direct shunting. Recently, a set of photoluminescence (PL) images of neighboring multicrystalline silicon wafers taken from a cell production line at different processing stages has been acquired. Both band-to-band PL and sub-bandgap PL (subPL) images showed various regions with different PL signal intensity. Interestingly, in several of these regions a reversal of the subPL intensity was observed right after the deposition of the antireflective coating. In this paper, we present the results of the synchrotron-based nano-X-ray fluorescence imaging performed in areas characterized by the subPL reversal to evaluate the possible role of metal decoration in this uncommon behavior. Furthermore, the acquisition of a statistically meaningful set of data for samples taken at different stages of the solar cell manufacturing allows us to shine a light on the precipitation and rediffusion mechanisms of metal impurities at these grain boundaries.

Authors:
 [1];  [2];  [1];  [1];  [1];  [3];  [1]
  1. Arizona State Univ., Tempe, AZ (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1342823
Report Number(s):
NREL/JA-5K00-67890
Journal ID: ISSN 2156-3381
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 7; Journal Issue: 1; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; multicrystalline silicon (mc-Si); photoluminescence (PL); PL band reversal sub-band PL; X-ray fluorescence

Citation Formats

Bernardini, Simone, Johnston, Steve, West, Bradley, Naerland, Tine U., Stuckelberger, Michael, Lai, Barry, and Bertoni, Mariana I. Nano-XRF Analysis of Metal Impurities Distribution at PL Active Grain Boundaries During mc-Silicon Solar Cell Processing. United States: N. p., 2016. Web. doi:10.1109/JPHOTOV.2016.2621340.
Bernardini, Simone, Johnston, Steve, West, Bradley, Naerland, Tine U., Stuckelberger, Michael, Lai, Barry, & Bertoni, Mariana I. Nano-XRF Analysis of Metal Impurities Distribution at PL Active Grain Boundaries During mc-Silicon Solar Cell Processing. United States. https://doi.org/10.1109/JPHOTOV.2016.2621340
Bernardini, Simone, Johnston, Steve, West, Bradley, Naerland, Tine U., Stuckelberger, Michael, Lai, Barry, and Bertoni, Mariana I. Mon . "Nano-XRF Analysis of Metal Impurities Distribution at PL Active Grain Boundaries During mc-Silicon Solar Cell Processing". United States. https://doi.org/10.1109/JPHOTOV.2016.2621340. https://www.osti.gov/servlets/purl/1342823.
@article{osti_1342823,
title = {Nano-XRF Analysis of Metal Impurities Distribution at PL Active Grain Boundaries During mc-Silicon Solar Cell Processing},
author = {Bernardini, Simone and Johnston, Steve and West, Bradley and Naerland, Tine U. and Stuckelberger, Michael and Lai, Barry and Bertoni, Mariana I.},
abstractNote = {Metal impurities are known to hinder the performance of commercial Si-based solar cells by inducing bulk recombination, increasing leakage current, and causing direct shunting. Recently, a set of photoluminescence (PL) images of neighboring multicrystalline silicon wafers taken from a cell production line at different processing stages has been acquired. Both band-to-band PL and sub-bandgap PL (subPL) images showed various regions with different PL signal intensity. Interestingly, in several of these regions a reversal of the subPL intensity was observed right after the deposition of the antireflective coating. In this paper, we present the results of the synchrotron-based nano-X-ray fluorescence imaging performed in areas characterized by the subPL reversal to evaluate the possible role of metal decoration in this uncommon behavior. Furthermore, the acquisition of a statistically meaningful set of data for samples taken at different stages of the solar cell manufacturing allows us to shine a light on the precipitation and rediffusion mechanisms of metal impurities at these grain boundaries.},
doi = {10.1109/JPHOTOV.2016.2621340},
journal = {IEEE Journal of Photovoltaics},
number = 1,
volume = 7,
place = {United States},
year = {Mon Nov 14 00:00:00 EST 2016},
month = {Mon Nov 14 00:00:00 EST 2016}
}

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Works referencing / citing this record:

Defect activation and annihilation in CIGS solar cells: an operando X-ray microscopy study
text, January 2020

  • Stuckelberger, Michael E.; Nietzold, Tara; West, Bradley
  • Deutsches Elektronen-Synchrotron, DESY, Hamburg
  • DOI: 10.3204/pubdb-2019-03853

Defect activation and annihilation in CIGS solar cells: an operando x-ray microscopy study
journal, February 2020

  • Stuckelberger, Michael E.; Nietzold, Tara; West, Bradley
  • Journal of Physics: Energy, Vol. 2, Issue 2
  • DOI: 10.1088/2515-7655/ab5fa6