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Title: Natural off-stoichiometry causes carrier doping in half-Heusler filled tetrahedral structures

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OSTI Identifier:
Grant/Contract Number:  
FG02-13ER46959; AC02-05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 95 Journal Issue: 8; Journal ID: ISSN 2469-9950
American Physical Society
Country of Publication:
United States

Citation Formats

Yu, Yonggang G., Zhang, Xiuwen, and Zunger, Alex. Natural off-stoichiometry causes carrier doping in half-Heusler filled tetrahedral structures. United States: N. p., 2017. Web.
Yu, Yonggang G., Zhang, Xiuwen, & Zunger, Alex. Natural off-stoichiometry causes carrier doping in half-Heusler filled tetrahedral structures. United States.
Yu, Yonggang G., Zhang, Xiuwen, and Zunger, Alex. Fri . "Natural off-stoichiometry causes carrier doping in half-Heusler filled tetrahedral structures". United States.
title = {Natural off-stoichiometry causes carrier doping in half-Heusler filled tetrahedral structures},
author = {Yu, Yonggang G. and Zhang, Xiuwen and Zunger, Alex},
abstractNote = {},
doi = {10.1103/PhysRevB.95.085201},
journal = {Physical Review B},
number = 8,
volume = 95,
place = {United States},
year = {2017},
month = {2}

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