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Title: Interface Design Principles for High‐Performance Organic Semiconductor Devices

Abstract

Organic solar cells (OSCs) are a promising cost-effective candidate in next generation photovoltaic technology. However, a critical bottleneck for OSCs is the electron/hole recombination loss through charge transfer state at the interface, which greatly limits the power conversion efficiency. W. Nie, A. Mohite, and co-workers demonstrate a simple strategy of suppressing the recombination rate by inserting a spacer layer at the donor-acceptor interface, resulting in a dramatic increase in power conversion efficiency.

Authors:
 [1];  [1];  [1];  [2];  [3];  [2];  [4];  [4];  [4];  [3];  [3];  [1]
  1. Material Synthesis and Integrated Devices MPA‐11, Los Alamos National Laboratory Los Alamos NM 87545 USA
  2. Department of Electrical and Computer Engineering University of Minnesota Minneapolis MN 55455 USA
  3. Physics of Condensed Matter and Complex Systems Division Los Alamos National Laboratory Los Alamos NM 87545 USA
  4. Physical Chemistry and Applied Spectroscopy Chemistry Division Los Alamos National Laboratory Los Alamos NM 87545 USA
Publication Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1342585
Alternate Identifier(s):
OSTI ID: 1212457; OSTI ID: 1400511
Grant/Contract Number:  
AC52-06NA25396
Resource Type:
Published Article
Journal Name:
Advanced Science
Additional Journal Information:
Journal Name: Advanced Science Journal Volume: 2 Journal Issue: 6; Journal ID: ISSN 2198-3844
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English
Subject:
14 SOLAR ENERGY; charge transfer state; interface; organic solar cell; recombination

Citation Formats

Nie, Wanyi, Gupta, Gautam, Crone, Brian K., Liu, Feilong, Smith, Darryl L., Ruden, P. Paul, Kuo, Cheng‐Yu, Tsai, Hsinhan, Wang, Hsing‐Lin, Li, Hao, Tretiak, Sergei, and Mohite, Aditya D. Interface Design Principles for High‐Performance Organic Semiconductor Devices. Germany: N. p., 2015. Web. doi:10.1002/advs.201500024.
Nie, Wanyi, Gupta, Gautam, Crone, Brian K., Liu, Feilong, Smith, Darryl L., Ruden, P. Paul, Kuo, Cheng‐Yu, Tsai, Hsinhan, Wang, Hsing‐Lin, Li, Hao, Tretiak, Sergei, & Mohite, Aditya D. Interface Design Principles for High‐Performance Organic Semiconductor Devices. Germany. https://doi.org/10.1002/advs.201500024
Nie, Wanyi, Gupta, Gautam, Crone, Brian K., Liu, Feilong, Smith, Darryl L., Ruden, P. Paul, Kuo, Cheng‐Yu, Tsai, Hsinhan, Wang, Hsing‐Lin, Li, Hao, Tretiak, Sergei, and Mohite, Aditya D. Mon . "Interface Design Principles for High‐Performance Organic Semiconductor Devices". Germany. https://doi.org/10.1002/advs.201500024.
@article{osti_1342585,
title = {Interface Design Principles for High‐Performance Organic Semiconductor Devices},
author = {Nie, Wanyi and Gupta, Gautam and Crone, Brian K. and Liu, Feilong and Smith, Darryl L. and Ruden, P. Paul and Kuo, Cheng‐Yu and Tsai, Hsinhan and Wang, Hsing‐Lin and Li, Hao and Tretiak, Sergei and Mohite, Aditya D.},
abstractNote = {Organic solar cells (OSCs) are a promising cost-effective candidate in next generation photovoltaic technology. However, a critical bottleneck for OSCs is the electron/hole recombination loss through charge transfer state at the interface, which greatly limits the power conversion efficiency. W. Nie, A. Mohite, and co-workers demonstrate a simple strategy of suppressing the recombination rate by inserting a spacer layer at the donor-acceptor interface, resulting in a dramatic increase in power conversion efficiency.},
doi = {10.1002/advs.201500024},
journal = {Advanced Science},
number = 6,
volume = 2,
place = {Germany},
year = {Mon Mar 23 00:00:00 EDT 2015},
month = {Mon Mar 23 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1002/advs.201500024

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Cited by: 16 works
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