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Title: Direct molecular dynamics simulation of Ge deposition on amorphous SiO 2 at experimentally relevant conditions

Molecular dynamics simulations were used to study Ge island nucleation and growth on amorphous SiO 2 substrates. This process is relevant in selective epitaxial growth of Ge on Si, for which SiO 2 is often used as a template mask. The islanding process was studied over a wide range of temperatures and fluxes, using a recently proposed empirical potential model for the Si–SiO 2–Ge system. The simulations provide an excellent quantitative picture of the Ge islanding and compare well with detailed experimental measurements. These quantitative comparisons were enabled by an analytical rate model as a bridge between simulations and experiments despite the fact that deposition fluxes accessible in simulations and experiments are necessarily different by many orders of magnitude. In particular, the simulations led to accurate predictions of the critical island size and the scaling of island density as a function of temperature. Lastly, the overall approach used here should be useful not just for future studies in this particular system, but also for molecular simulations of deposition in other materials.
 [1] ;  [2] ;  [3] ;  [1]
  1. Univ. of Pennsylvania, Philadelphia, PA (United States)
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  3. Univ. of New Mexico, Albuquerque, NM (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 0039-6028
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Surface Science
Additional Journal Information:
Journal Volume: 641; Journal Issue: C; Journal ID: ISSN 0039-6028
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org:
Country of Publication:
United States
36 MATERIALS SCIENCE; molecular dynamics; atomic deposition; amorphous SiO2; germanium; silicon
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1244741