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Title: Pressure-driven semiconductor-semiconductor transition and its structural origin in oxygen vacancy ordered SrCo O 2.5

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1341912
Grant/Contract Number:  
AC02-98CH10886; AC02-05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 95 Journal Issue: 2; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Hong, Fang, Yue, Binbin, Liu, Zhenxian, Chen, Bin, and Mao, Ho-Kwang. Pressure-driven semiconductor-semiconductor transition and its structural origin in oxygen vacancy ordered SrCo O 2.5. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.024115.
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Hong, Fang, Yue, Binbin, Liu, Zhenxian, Chen, Bin, & Mao, Ho-Kwang. Pressure-driven semiconductor-semiconductor transition and its structural origin in oxygen vacancy ordered SrCo O 2.5. United States. https://doi.org/10.1103/PhysRevB.95.024115
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Hong, Fang, Yue, Binbin, Liu, Zhenxian, Chen, Bin, and Mao, Ho-Kwang. Mon . "Pressure-driven semiconductor-semiconductor transition and its structural origin in oxygen vacancy ordered SrCo O 2.5". United States. https://doi.org/10.1103/PhysRevB.95.024115.
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@article{osti_1341912,
title = {Pressure-driven semiconductor-semiconductor transition and its structural origin in oxygen vacancy ordered SrCo O 2.5},
author = {Hong, Fang and Yue, Binbin and Liu, Zhenxian and Chen, Bin and Mao, Ho-Kwang},
abstractNote = {},
doi = {10.1103/PhysRevB.95.024115},
journal = {Physical Review B},
number = 2,
volume = 95,
place = {United States},
year = {2017},
month = {1}
}
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Journal Article:
Free Publicly Available Full Text
Accepted Manuscript (Publisher)
Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.95.024115
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