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This content will become publicly available on October 11, 2017

Title: Improving the radiation hardness of graphene field effect transistors

Ionizing radiation poses a significant challenge to the operation and reliability of conventional silicon-based devices. In this paper, we report the effects of gamma radiation on graphene field-effect transistors (GFETs), along with a method to mitigate those effects by developing a radiation-hardened version of our back-gated GFETs. We demonstrate that activated atmospheric oxygen from the gamma ray interaction with air damages the semiconductor device, and damage to the substrate contributes additional threshold voltage instability. Our radiation-hardened devices, which have protection against these two effects, exhibit minimal performance degradation, improved stability, and significantly reduced hysteresis after prolonged gamma radiation exposure. Finally, we believe this work provides an insight into graphene's interactions with ionizing radiation that could enable future graphene-based electronic devices to be used for space, military, and other radiation-sensitive applications.
 [1] ;  [1] ;  [1] ;  [2] ;  [3] ;  [3] ;  [3] ;  [1]
  1. Columbia Univ., New York, NY (United States). Dept. of Electrical Engineering
  2. Brookhaven National Lab. (BNL), Upton, NY (United States). Chemistry Division
  3. Columbia Univ., New York, NY (United States). Dept. of Mechanical Engineering
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0003-6951; R&D Project: CO031; KC0304030
Grant/Contract Number:
SC0012704; AC02-98CH10886; DMR-1420634; HDTRA1-11-0022
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 15; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Research Org:
Brookhaven National Lab. (BNL), Upton, NY (United States); Columbia Univ., New York, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF) (United States); Defense Threat Reduction Agency (DTRA) (United States)
Country of Publication:
United States
36 MATERIALS SCIENCE graphene; gamma rays; Dirac equation; gamma ray effects; x-ray photoelectron spectroscopy