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Title: Improving the radiation hardness of graphene field effect transistors

Ionizing radiation poses a significant challenge to the operation and reliability of conventional silicon-based devices. In this paper, we report the effects of gamma radiation on graphene field-effect transistors (GFETs), along with a method to mitigate those effects by developing a radiation-hardened version of our back-gated GFETs. We demonstrate that activated atmospheric oxygen from the gamma ray interaction with air damages the semiconductor device, and damage to the substrate contributes additional threshold voltage instability. Our radiation-hardened devices, which have protection against these two effects, exhibit minimal performance degradation, improved stability, and significantly reduced hysteresis after prolonged gamma radiation exposure. Finally, we believe this work provides an insight into graphene's interactions with ionizing radiation that could enable future graphene-based electronic devices to be used for space, military, and other radiation-sensitive applications.
Authors:
 [1] ;  [1] ;  [1] ; ORCiD logo [2] ;  [3] ; ORCiD logo [3] ;  [3] ;  [1]
  1. Columbia Univ., New York, NY (United States). Dept. of Electrical Engineering
  2. Brookhaven National Lab. (BNL), Upton, NY (United States). Chemistry Division
  3. Columbia Univ., New York, NY (United States). Dept. of Mechanical Engineering
Publication Date:
Report Number(s):
BNL-113404-2017-JA
Journal ID: ISSN 0003-6951; R&D Project: CO031; KC0304030; TRN: US1701532
Grant/Contract Number:
SC0012704; AC02-98CH10886; DMR-1420634; HDTRA1-11-0022
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 15; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Brookhaven National Lab. (BNL), Upton, NY (United States); Columbia Univ., New York, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF); Defense Threat Reduction Agency (DTRA) (United States)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; graphene; gamma rays; Dirac equation; gamma ray effects; x-ray photoelectron spectroscopy
OSTI Identifier:
1341676
Alternate Identifier(s):
OSTI ID: 1328601

Alexandrou, Konstantinos, Masurkar, Amrita, Edrees, Hassan, Wishart, James F., Hao, Yufeng, Petrone, Nicholas, Hone, James, and Kymissis, Ioannis. Improving the radiation hardness of graphene field effect transistors. United States: N. p., Web. doi:10.1063/1.4963782.
Alexandrou, Konstantinos, Masurkar, Amrita, Edrees, Hassan, Wishart, James F., Hao, Yufeng, Petrone, Nicholas, Hone, James, & Kymissis, Ioannis. Improving the radiation hardness of graphene field effect transistors. United States. doi:10.1063/1.4963782.
Alexandrou, Konstantinos, Masurkar, Amrita, Edrees, Hassan, Wishart, James F., Hao, Yufeng, Petrone, Nicholas, Hone, James, and Kymissis, Ioannis. 2016. "Improving the radiation hardness of graphene field effect transistors". United States. doi:10.1063/1.4963782. https://www.osti.gov/servlets/purl/1341676.
@article{osti_1341676,
title = {Improving the radiation hardness of graphene field effect transistors},
author = {Alexandrou, Konstantinos and Masurkar, Amrita and Edrees, Hassan and Wishart, James F. and Hao, Yufeng and Petrone, Nicholas and Hone, James and Kymissis, Ioannis},
abstractNote = {Ionizing radiation poses a significant challenge to the operation and reliability of conventional silicon-based devices. In this paper, we report the effects of gamma radiation on graphene field-effect transistors (GFETs), along with a method to mitigate those effects by developing a radiation-hardened version of our back-gated GFETs. We demonstrate that activated atmospheric oxygen from the gamma ray interaction with air damages the semiconductor device, and damage to the substrate contributes additional threshold voltage instability. Our radiation-hardened devices, which have protection against these two effects, exhibit minimal performance degradation, improved stability, and significantly reduced hysteresis after prolonged gamma radiation exposure. Finally, we believe this work provides an insight into graphene's interactions with ionizing radiation that could enable future graphene-based electronic devices to be used for space, military, and other radiation-sensitive applications.},
doi = {10.1063/1.4963782},
journal = {Applied Physics Letters},
number = 15,
volume = 109,
place = {United States},
year = {2016},
month = {10}
}

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