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Title: Formation of Ge nanoparticles in SiO xN y by ion implantation and thermal annealing

Germanium nanoparticles embedded within dielectric matrices hold much promise for applications in optoelectronic and electronic devices. Here we investigate the formation of Ge nanoparticles in amorphous SiO 1.67N 0.14 as a function of implanted atom concentration and thermal annealing temperature. Using x-ray absorption spectroscopy and other complementary techniques, we show Ge nanoparticles exhibit significant finite-size effects such that the coordination number decreases and structural disorder increases as the nanoparticle size decreases. While the composition of SiO 1.67N 0.14 is close to that of SiO 2, we demonstrate that the addition of this small fraction of N yields a much reduced nanoparticle size relative to those formed in SiO 2 under comparable implantation and annealing conditions. We attribute this difference to an increase in an atomic density and a much reduced diffusivity of Ge in the oxynitride matrix. Finally, these results demonstrate the potential for tailoring Ge nanoparticle sizes and structural properties in the SiO xN y matrices by controlling the oxynitride stoichiometry.
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  1. Australian National Univ., Canberra, ACT (Australia)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Univ. Federal do Rio Grande do Sul, Porto Alegre (Brazil)
  4. Australian Synchrotron, Melbourne (Australia)
Publication Date:
Report Number(s):
Journal ID: ISSN 0021-8979; R&D Project: 20685
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 15; Journal ID: ISSN 0021-8979
American Institute of Physics (AIP)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
BNL Program Development; USDOE
Country of Publication:
United States
36 MATERIALS SCIENCE; germanium nanoparticles; dielectric matrices; optoelectronic; x-ray absorbtion spectroscopy
OSTI Identifier: