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Title: High-speed and low-energy nitride memristors

Abstract

High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. Here, the motion of positively charged nitrogen vacancies is likely responsible for the observed switching.

Authors:
 [1];  [2];  [2];  [3];  [3];  [3];  [2];  [2];  [4]
  1. Hewlett Packard Labs., Palo Alto, CA (United States); Seoul National Univ. of Science and Technology, Seoul (South Korea)
  2. Hewlett Packard Labs., Palo Alto, CA (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  4. Hewlett Packard Labs., Palo Alto, CA (United States); Univ. of Massachusetts, Amherst, MA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1341409
Report Number(s):
SAND-2017-0331J
Journal ID: ISSN 1616-301X; 650365
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Volume: 26; Journal Issue: 29; Journal ID: ISSN 1616-301X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Choi, Byung Joon, Torrezan, Antonio C., Strachan, John Paul, Kotula, P. G., Lohn, A. J., Marinella, Matthew J., Li, Zhiyong, Williams, R. Stanley, and Yang, J. Joshua. High-speed and low-energy nitride memristors. United States: N. p., 2016. Web. doi:10.1002/adfm.201600680.
Choi, Byung Joon, Torrezan, Antonio C., Strachan, John Paul, Kotula, P. G., Lohn, A. J., Marinella, Matthew J., Li, Zhiyong, Williams, R. Stanley, & Yang, J. Joshua. High-speed and low-energy nitride memristors. United States. doi:10.1002/adfm.201600680.
Choi, Byung Joon, Torrezan, Antonio C., Strachan, John Paul, Kotula, P. G., Lohn, A. J., Marinella, Matthew J., Li, Zhiyong, Williams, R. Stanley, and Yang, J. Joshua. Tue . "High-speed and low-energy nitride memristors". United States. doi:10.1002/adfm.201600680. https://www.osti.gov/servlets/purl/1341409.
@article{osti_1341409,
title = {High-speed and low-energy nitride memristors},
author = {Choi, Byung Joon and Torrezan, Antonio C. and Strachan, John Paul and Kotula, P. G. and Lohn, A. J. and Marinella, Matthew J. and Li, Zhiyong and Williams, R. Stanley and Yang, J. Joshua},
abstractNote = {High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. Here, the motion of positively charged nitrogen vacancies is likely responsible for the observed switching.},
doi = {10.1002/adfm.201600680},
journal = {Advanced Functional Materials},
number = 29,
volume = 26,
place = {United States},
year = {2016},
month = {5}
}

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Cited by: 17 works
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