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Title: High-speed and low-energy nitride memristors

High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. Here, the motion of positively charged nitrogen vacancies is likely responsible for the observed switching.
Authors:
 [1] ;  [2] ;  [2] ;  [3] ;  [3] ;  [3] ;  [2] ;  [2] ;  [4]
  1. Hewlett Packard Labs., Palo Alto, CA (United States); Seoul National Univ. of Science and Technology, Seoul (South Korea)
  2. Hewlett Packard Labs., Palo Alto, CA (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  4. Hewlett Packard Labs., Palo Alto, CA (United States); Univ. of Massachusetts, Amherst, MA (United States)
Publication Date:
Report Number(s):
SAND-2017-0331J
Journal ID: ISSN 1616-301X; 650365
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Volume: 26; Journal Issue: 29; Journal ID: ISSN 1616-301X
Publisher:
Wiley
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1341409