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Title: Modeling of reduced effective secondary electron emission yield from a velvet surface

Complex structures on a material surface can significantly reduce total secondary electron emission from that surface. A velvet is a surface that consists of an array of vertically standing whiskers. The reduction occurs due to the capture of low-energy, true secondary electrons emitted at the bottom of the structure and on the sides of the velvet whiskers. We performed numerical simulations and developed an approximate analytical model that calculates the net secondary electron emission yield from a velvet surface as a function of the velvet whisker length and packing density, and the angle of incidence of primary electrons. We found that to suppress secondary electrons, the following condition on dimensionless parameters must be met: (π/2) DΑ tan θ >> 1, where theta is the angle of incidence of the primary electron from the normal, D is the fraction of surface area taken up by the velvet whisker bases, and A is the aspect ratio, A = h/r, the ratio of height to radius of the velvet whiskers. We find that velvets available today can reduce the secondary electron yield by 90% from the value of a flat surface. As a result, the values of optimal velvet whisker packing density thatmore » maximally suppresses the secondary electron emission yield are determined as a function of velvet aspect ratio and the electron angle of incidence.« less
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  1. Princeton Univ., Princeton, NJ (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 0021-8979; TRN: US1701179
Grant/Contract Number:
No DOE funding? AFOSR FA9550-11-1-0282
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 120; Journal Issue: 21; Journal ID: ISSN 0021-8979
American Institute of Physics (AIP)
Research Org:
Princeton Plasma Physics Lab. (PPPL), Princeton, NJ (United States)
Sponsoring Org:
Contributing Orgs:
This work was conducted under a subcontract with UCLA with the support of AFOSR under Grant No. FA9550-11-1-0282.
Country of Publication:
United States
OSTI Identifier: