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Title: Dynamic deformation and fracture of single crystal silicon: Fracture modes, damage laws, and anisotropy

Abstract

Impact fracture of single-crystal Si is critical to long-term reliability of electronic devices and solar cells for its wide use as components or substrates in semiconductor industry. Single-crystal Si is loaded along two different crystallographic directions with a split Hopkinson pressure bar integrated with an in situ x-ray imaging and diffraction system. Bulk stress histories are measured, simultaneously with x-ray phase contrast imaging (XPCI) and Laue diffraction. Damage evolution is quantified with grayscale maps from XPCI. Single-crystal Si exhibits pronounced anisotropy in fracture modes, and thus fracture strengths and damage evolution. For loading along [11¯ 0] and viewing along [001], (1¯1¯0)[11¯ 0] cleavage is activated and induces horizontal primary cracks followed by perpendicular wing cracks. However, for loading along [011¯] and viewing along [111], random nucleation and growth of shear and tensile-splitting crack networks lead to catastrophic failure of materials with no cleavage. The primary-wing crack mode leads to a lower characteristic fracture strength due to predamage, but a more concentrated strength distribution, i.e., a higher Weibull modulus, compared to the second loading case. Furthermore, the sequential primary cracking, wing cracking and wing-crack coalescence processes result in a gradual increase of damage with time, deviating from theoretical predictions. Particle sizemore » and aspect ratios of fragments are discussed with postmortem fragment analysis, which verifies fracture modes observed in XPCI.« less

Authors:
 [1];  [2];  [2];  [3];  [3];  [4];  [5]
  1. The Peac Institute of Multiscale Sciences, Sichuan (People's Republic of China); Southwest Jiaotong Univ., Sichuan (People's Republic of China); Univ. of Science and Technology of China, Hefei (People's Republic of China)
  2. The Peac Institute of Multiscale Sciences, Sichuan (People's Republic of China)
  3. Argonne National Lab. (ANL), Argonne, IL (United States)
  4. Univ. of Science and Technology of China, Hefei (People's Republic of China)
  5. The Peac Institute of Multiscale Sciences, Sichuan (People's Republic of China); Southwest Jiaotong Univ., Sichuan (People's Republic of China)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NNSFC); National Basic Research Program of China
OSTI Identifier:
1340295
Alternate Identifier(s):
OSTI ID: 1323568
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Acta Materialia
Additional Journal Information:
Journal Volume: 114; Journal Issue: C; Journal ID: ISSN 1359-6454
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Laue diffraction; cleavage; dynamic fracture; single-crystal Si

Citation Formats

Huang, J. Y., E, J. C., Huang, J. W., Sun, T., Fezzaa, K., Xu, S. L., and Luo, S. N. Dynamic deformation and fracture of single crystal silicon: Fracture modes, damage laws, and anisotropy. United States: N. p., 2016. Web. doi:10.1016/j.actamat.2016.05.022.
Huang, J. Y., E, J. C., Huang, J. W., Sun, T., Fezzaa, K., Xu, S. L., & Luo, S. N. Dynamic deformation and fracture of single crystal silicon: Fracture modes, damage laws, and anisotropy. United States. https://doi.org/10.1016/j.actamat.2016.05.022
Huang, J. Y., E, J. C., Huang, J. W., Sun, T., Fezzaa, K., Xu, S. L., and Luo, S. N. Wed . "Dynamic deformation and fracture of single crystal silicon: Fracture modes, damage laws, and anisotropy". United States. https://doi.org/10.1016/j.actamat.2016.05.022. https://www.osti.gov/servlets/purl/1340295.
@article{osti_1340295,
title = {Dynamic deformation and fracture of single crystal silicon: Fracture modes, damage laws, and anisotropy},
author = {Huang, J. Y. and E, J. C. and Huang, J. W. and Sun, T. and Fezzaa, K. and Xu, S. L. and Luo, S. N.},
abstractNote = {Impact fracture of single-crystal Si is critical to long-term reliability of electronic devices and solar cells for its wide use as components or substrates in semiconductor industry. Single-crystal Si is loaded along two different crystallographic directions with a split Hopkinson pressure bar integrated with an in situ x-ray imaging and diffraction system. Bulk stress histories are measured, simultaneously with x-ray phase contrast imaging (XPCI) and Laue diffraction. Damage evolution is quantified with grayscale maps from XPCI. Single-crystal Si exhibits pronounced anisotropy in fracture modes, and thus fracture strengths and damage evolution. For loading along [11¯ 0] and viewing along [001], (1¯1¯0)[11¯ 0] cleavage is activated and induces horizontal primary cracks followed by perpendicular wing cracks. However, for loading along [011¯] and viewing along [111], random nucleation and growth of shear and tensile-splitting crack networks lead to catastrophic failure of materials with no cleavage. The primary-wing crack mode leads to a lower characteristic fracture strength due to predamage, but a more concentrated strength distribution, i.e., a higher Weibull modulus, compared to the second loading case. Furthermore, the sequential primary cracking, wing cracking and wing-crack coalescence processes result in a gradual increase of damage with time, deviating from theoretical predictions. Particle size and aspect ratios of fragments are discussed with postmortem fragment analysis, which verifies fracture modes observed in XPCI.},
doi = {10.1016/j.actamat.2016.05.022},
journal = {Acta Materialia},
number = C,
volume = 114,
place = {United States},
year = {2016},
month = {5}
}

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Cited by: 4 works
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