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Title: Inductively coupled BCl 3/Cl 2 /Ar plasma etching of Al-rich AlGaN

Varying atomic ratios in compound semiconductors is well known to have large effects on the etching properties of the material. The use of thin device barrier layers, down to 25 nm, adds to the fabrication complexity by requiring precise control over etch rates and surface morphology. The effects of bias power and gas ratio of BCl 3 to Cl 2 for inductively coupled plasma etching of high Al content AlGaN were contrasted with AlN in this study for etch rate, selectivity, and surface morphology. Etch rates were greatly affected by both bias power and gas chemistry. Here we detail the effects of small variations in Al composition for AlGaN and show substantial changes in etch rate with regards to bias power as compared to AlN.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND-2016-12025J
Journal ID: ISSN 0734-2101; 649494
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 35; Journal Issue: 2; Journal ID: ISSN 0734-2101
Publisher:
American Vacuum Society
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1340255

Douglas, Erica A., Sanchez, Carlos A., Kaplar, Robert J., Allerman, Andrew A., and Baca, Albert G.. Inductively coupled BCl3/Cl2 /Ar plasma etching of Al-rich AlGaN. United States: N. p., Web. doi:10.1116/1.4971245.
Douglas, Erica A., Sanchez, Carlos A., Kaplar, Robert J., Allerman, Andrew A., & Baca, Albert G.. Inductively coupled BCl3/Cl2 /Ar plasma etching of Al-rich AlGaN. United States. doi:10.1116/1.4971245.
Douglas, Erica A., Sanchez, Carlos A., Kaplar, Robert J., Allerman, Andrew A., and Baca, Albert G.. 2016. "Inductively coupled BCl3/Cl2 /Ar plasma etching of Al-rich AlGaN". United States. doi:10.1116/1.4971245. https://www.osti.gov/servlets/purl/1340255.
@article{osti_1340255,
title = {Inductively coupled BCl3/Cl2 /Ar plasma etching of Al-rich AlGaN},
author = {Douglas, Erica A. and Sanchez, Carlos A. and Kaplar, Robert J. and Allerman, Andrew A. and Baca, Albert G.},
abstractNote = {Varying atomic ratios in compound semiconductors is well known to have large effects on the etching properties of the material. The use of thin device barrier layers, down to 25 nm, adds to the fabrication complexity by requiring precise control over etch rates and surface morphology. The effects of bias power and gas ratio of BCl3 to Cl2 for inductively coupled plasma etching of high Al content AlGaN were contrasted with AlN in this study for etch rate, selectivity, and surface morphology. Etch rates were greatly affected by both bias power and gas chemistry. Here we detail the effects of small variations in Al composition for AlGaN and show substantial changes in etch rate with regards to bias power as compared to AlN.},
doi = {10.1116/1.4971245},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 2,
volume = 35,
place = {United States},
year = {2016},
month = {12}
}