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Title: Ultrafast carrier capture and Auger recombination in single GaN/InGaN multiple quantum well nanowires

Ultrafast optical microscopy is an important tool for examining fundamental phenomena in semiconductor nanowires with high temporal and spatial resolution. In this paper, we used this technique to study carrier dynamics in single GaN/InGaN core–shell nonpolar multiple quantum well nanowires. We find that intraband carrier–carrier scattering is the main channel governing carrier capture, while subsequent carrier relaxation is dominated by three-carrier Auger recombination at higher densities and bimolecular recombination at lower densities. Finally, the Auger constants in these nanowires are approximately 2 orders of magnitude lower than in planar InGaN multiple quantum wells, highlighting their potential for future light-emitting devices.
Authors:
ORCiD logo [1] ;  [2] ;  [2] ;  [1] ;  [2] ; ORCiD logo [2] ;  [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND-2016-11962J
Journal ID: ISSN 2330-4022; 649459
Grant/Contract Number:
AC04-94AL85000; AC52-06NA25396
Type:
Accepted Manuscript
Journal Name:
ACS Photonics
Additional Journal Information:
Journal Volume: 3; Journal Issue: 12; Journal ID: ISSN 2330-4022
Publisher:
American Chemical Society
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Auger recombination; carrier capture; GaN/InGaN nanowires; ultrafast optical microscopy
OSTI Identifier:
1339652