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Title: Ultra-high resolution electron microscopy

Abstract

The last two decades have seen dramatic advances in the resolution of the electron microscope brought about by the successful correction of lens aberrations that previously limited resolution for most of its history. Here we briefly review these advances, the achievement of sub-Ångstrom resolution and the ability to identify individual atoms, their bonding configurations and even their dynamics and diffusion pathways. We then present a review of the basic physics of electron scattering, lens aberrations and their correction, and an approximate imaging theory for thin crystals which provides physical insight into the various different imaging modes. Then we proceed to describe a more exact imaging theory starting from Yoshioka’s formulation and covering full image simulation methods using Bloch waves, the multislice formulation and the frozen phonon/quantum excitation of phonons models. Delocalization of inelastic scattering has become an important limiting factor at atomic resolution. We therefore discuss this issue extensively, showing how the full-width-half-maximum is the appropriate measure for predicting image contrast, but the diameter containing 50% of the excitation is an important measure of the range of the interaction. These two measures can differ by a factor of 5, are not a simple function of binding energy, and full imagemore » simulations are required to match to experiment. The Z-dependence of annular dark field images is also discussed extensively, both for single atoms and for crystals, and we show that temporal incoherence must be included accurately if atomic species are to be identified through matching experimental intensities to simulations. Finally we mention a few promising directions for future investigation.« less

Authors:
 [1];  [1];  [2]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
  2. National Univ. of Singapore (Singapore). Dept. of Materials Science and Engineering
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1339365
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Reports on Progress in Physics
Additional Journal Information:
Journal Volume: 80; Journal Issue: 2; Journal ID: ISSN 0034-4885
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; scanning transmission electron microscopy; aberration correction; electron scattering; delocalization of inelastic scattering; image simulation

Citation Formats

Oxley, Mark P., Lupini, Andrew R., and Pennycook, Stephen J. Ultra-high resolution electron microscopy. United States: N. p., 2016. Web. doi:10.1088/1361-6633/80/2/026101.
Oxley, Mark P., Lupini, Andrew R., & Pennycook, Stephen J. Ultra-high resolution electron microscopy. United States. https://doi.org/10.1088/1361-6633/80/2/026101
Oxley, Mark P., Lupini, Andrew R., and Pennycook, Stephen J. Fri . "Ultra-high resolution electron microscopy". United States. https://doi.org/10.1088/1361-6633/80/2/026101. https://www.osti.gov/servlets/purl/1339365.
@article{osti_1339365,
title = {Ultra-high resolution electron microscopy},
author = {Oxley, Mark P. and Lupini, Andrew R. and Pennycook, Stephen J.},
abstractNote = {The last two decades have seen dramatic advances in the resolution of the electron microscope brought about by the successful correction of lens aberrations that previously limited resolution for most of its history. Here we briefly review these advances, the achievement of sub-Ångstrom resolution and the ability to identify individual atoms, their bonding configurations and even their dynamics and diffusion pathways. We then present a review of the basic physics of electron scattering, lens aberrations and their correction, and an approximate imaging theory for thin crystals which provides physical insight into the various different imaging modes. Then we proceed to describe a more exact imaging theory starting from Yoshioka’s formulation and covering full image simulation methods using Bloch waves, the multislice formulation and the frozen phonon/quantum excitation of phonons models. Delocalization of inelastic scattering has become an important limiting factor at atomic resolution. We therefore discuss this issue extensively, showing how the full-width-half-maximum is the appropriate measure for predicting image contrast, but the diameter containing 50% of the excitation is an important measure of the range of the interaction. These two measures can differ by a factor of 5, are not a simple function of binding energy, and full image simulations are required to match to experiment. The Z-dependence of annular dark field images is also discussed extensively, both for single atoms and for crystals, and we show that temporal incoherence must be included accurately if atomic species are to be identified through matching experimental intensities to simulations. Finally we mention a few promising directions for future investigation.},
doi = {10.1088/1361-6633/80/2/026101},
journal = {Reports on Progress in Physics},
number = 2,
volume = 80,
place = {United States},
year = {Fri Dec 23 00:00:00 EST 2016},
month = {Fri Dec 23 00:00:00 EST 2016}
}

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Works referencing / citing this record:

Understanding CeO 2 -Based Nanostructures through Advanced Electron Microscopy in 2D and 3D
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Materials Structure, Properties and Dynamics through Scanning Transmission Electron Microscopy
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Materials Structure, Properties and Dynamics through Scanning Transmission Electron Microscopy
text, January 2019