skip to main content

DOE PAGESDOE PAGES

Title: Upsets in Erased Floating Gate Cells With High-Energy Protons

We discuss upsets in erased floating gate cells, due to large threshold voltage shifts, using statistical distributions collected on a large number of memory cells. The spread in the neutral threshold voltage appears to be too low to quantitatively explain the experimental observations in terms of simple charge loss, at least in SLC devices. The possibility that memories exposed to high energy protons and heavy ions exhibit negative charge transfer between programmed and erased cells is investigated, although the analysis does not provide conclusive support to this hypothesis.
Authors:
; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Report Number(s):
SAND-2017-0103J
Journal ID: ISSN 0018-9499; 650209; TRN: US1701060
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 64; Journal Issue: 1; Journal ID: ISSN 0018-9499
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS; Non-volatile Memories; Flash Memories; Single Event Upsets; High-energy Protons
OSTI Identifier:
1339278