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Title: Tuning the physical properties of amorphous In–Zn–Sn–O thin films using combinatorial sputtering

Transparent conductive oxides and amorphous oxide semiconductors are important materials for many modern technologies. Here, we explore the ternary indium zinc tin oxide (IZTO) using combinatorial synthesis and spatially resolved characterization. The electrical conductivity, work function, absorption onset, mechanical hardness, and elastic modulus of the optically transparent (>85%) amorphous IZTO thin films were found to be in the range of 10–2415 S/cm, 4.6–5.3 eV, 3.20–3.34 eV, 9.0–10.8 GPa, and 111–132 GPa, respectively, depending on the cation composition and the deposition conditions. Furthermore, this study enables control of IZTO performance over a broad range of cation compositions.
Authors:
 [1] ;  [1] ;  [2] ;  [3] ;  [1] ;  [1] ;  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Colorado School of Mines, Golden, CO (United States); Indian Institute of Technology Ropar (India)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
Publication Date:
Report Number(s):
NREL/JA-5K00-66557
Journal ID: ISSN 2159-6859; applab
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
MRS Communications
Additional Journal Information:
Journal Volume: 6; Journal Issue: 04; Journal ID: ISSN 2159-6859
Publisher:
Materials Research Society - Cambridge University Press
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; IZTO; ZITO; ITZO; high-throughput experiments; amorphous; combinatorial synthesis; oxide
OSTI Identifier:
1339251

Ndione, Paul F., Zakutayev, A., Kumar, M., Packard, C. E., Berry, J. J., Perkins, J. D., and Ginley, D. S.. Tuning the physical properties of amorphous In–Zn–Sn–O thin films using combinatorial sputtering. United States: N. p., Web. doi:10.1557/mrc.2016.57.
Ndione, Paul F., Zakutayev, A., Kumar, M., Packard, C. E., Berry, J. J., Perkins, J. D., & Ginley, D. S.. Tuning the physical properties of amorphous In–Zn–Sn–O thin films using combinatorial sputtering. United States. doi:10.1557/mrc.2016.57.
Ndione, Paul F., Zakutayev, A., Kumar, M., Packard, C. E., Berry, J. J., Perkins, J. D., and Ginley, D. S.. 2016. "Tuning the physical properties of amorphous In–Zn–Sn–O thin films using combinatorial sputtering". United States. doi:10.1557/mrc.2016.57. https://www.osti.gov/servlets/purl/1339251.
@article{osti_1339251,
title = {Tuning the physical properties of amorphous In–Zn–Sn–O thin films using combinatorial sputtering},
author = {Ndione, Paul F. and Zakutayev, A. and Kumar, M. and Packard, C. E. and Berry, J. J. and Perkins, J. D. and Ginley, D. S.},
abstractNote = {Transparent conductive oxides and amorphous oxide semiconductors are important materials for many modern technologies. Here, we explore the ternary indium zinc tin oxide (IZTO) using combinatorial synthesis and spatially resolved characterization. The electrical conductivity, work function, absorption onset, mechanical hardness, and elastic modulus of the optically transparent (>85%) amorphous IZTO thin films were found to be in the range of 10–2415 S/cm, 4.6–5.3 eV, 3.20–3.34 eV, 9.0–10.8 GPa, and 111–132 GPa, respectively, depending on the cation composition and the deposition conditions. Furthermore, this study enables control of IZTO performance over a broad range of cation compositions.},
doi = {10.1557/mrc.2016.57},
journal = {MRS Communications},
number = 04,
volume = 6,
place = {United States},
year = {2016},
month = {12}
}

Works referenced in this record:

Transparent Conducting Oxides for Photovoltaics
journal, March 2007
  • Fortunato, Elvira; Ginley, David; Hosono, Hideo
  • MRS Bulletin, Vol. 32, Issue 03, p. 242-247
  • DOI: 10.1557/mrs2007.29