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Title: Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga 2O 3 thin films grown by pulsed laser deposition]

Beta-gallium oxide (β-Ga 2O 3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga 2O 3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga 2O 3 films on (0001) sapphire and (–201) Ga 2O 3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. As a result, there is a strong temperature dependence to the phase formation, morphology, and electronic properties of β-Ga 2O 3 from 350 to 550 °C.
Authors:
 [1] ; ORCiD logo [1] ;  [1] ;  [2] ;  [1] ;  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Colorado School of Mines, Golden, CO (United States)
Publication Date:
Report Number(s):
NREL/JA-5K00-67538
Journal ID: ISSN 2159-6859
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
MRS Communications
Additional Journal Information:
Journal Volume: 6; Journal Issue: 4; Journal ID: ISSN 2159-6859
Publisher:
Materials Research Society - Cambridge University Press
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; thin films; gallium oxide; optoelectronics; phase transformation; dopants
OSTI Identifier:
1339246

Garten, Lauren M., Zakutayev, Andriy, Perkins, John D., Gorman, Brian P., Ndione, Paul F., and Ginley, David S.. Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga2O3 thin films grown by pulsed laser deposition]. United States: N. p., Web. doi:10.1557/mrc.2016.50.
Garten, Lauren M., Zakutayev, Andriy, Perkins, John D., Gorman, Brian P., Ndione, Paul F., & Ginley, David S.. Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga2O3 thin films grown by pulsed laser deposition]. United States. doi:10.1557/mrc.2016.50.
Garten, Lauren M., Zakutayev, Andriy, Perkins, John D., Gorman, Brian P., Ndione, Paul F., and Ginley, David S.. 2016. "Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga2O3 thin films grown by pulsed laser deposition]". United States. doi:10.1557/mrc.2016.50. https://www.osti.gov/servlets/purl/1339246.
@article{osti_1339246,
title = {Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga2O3 thin films grown by pulsed laser deposition]},
author = {Garten, Lauren M. and Zakutayev, Andriy and Perkins, John D. and Gorman, Brian P. and Ndione, Paul F. and Ginley, David S.},
abstractNote = {Beta-gallium oxide (β-Ga2O3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga2O3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga2O3 films on (0001) sapphire and (–201) Ga2O3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. As a result, there is a strong temperature dependence to the phase formation, morphology, and electronic properties of β-Ga2O3 from 350 to 550 °C.},
doi = {10.1557/mrc.2016.50},
journal = {MRS Communications},
number = 4,
volume = 6,
place = {United States},
year = {2016},
month = {11}
}