Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga2O3 thin films grown by pulsed laser deposition]

Garten, Lauren M.; Zakutayev, Andriy; Perkins, John D.; Gorman, Brian P.; Ndione, Paul F.; Ginley, David S.

doi:10.1557/mrc.2016.50

Title: Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga₂O₃ thin films grown by pulsed laser deposition]

Journal Article · 21 November 2016 · MRS Communications

DOI: https://doi.org/10.1557/mrc.2016.50 · OSTI ID:1339246

Garten, Lauren M. ^[1];

^[1]; Perkins, John D. ^[1]; Gorman, Brian P. ^[2]; Ndione, Paul F. ^[1]; Ginley, David S. ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)
Colorado School of Mines, Golden, CO (United States)

Beta-gallium oxide (β-Ga₂O₃) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga₂O₃ films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga₂O₃ films on (0001) sapphire and (–201) Ga₂O₃ single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. As a result, there is a strong temperature dependence to the phase formation, morphology, and electronic properties of β-Ga₂O₃ from 350 to 550 °C.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC36-08GO28308; AC36-99GO10337

OSTI ID:: 1339246

Report Number(s):: NREL/JA--5K00-67538

Journal Information:: MRS Communications, Journal Name: MRS Communications Journal Issue: 4 Vol. 6; ISSN 2159-6859

Publisher:: Materials Research Society - Cambridge University PressCopyright Statement

Country of Publication:: United States

Language:: English

References (12)

Development of gallium oxide power devices: Development of gallium oxide power devices Higashiwaki, Masataka; Sasaki, Kohei; Kuramata, Akito physica status solidi (a), Vol. 211, Issue 1 https://doi.org/10.1002/pssa.201330197	journal	November 2013
Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures Orita, Masahiro; Hiramatsu, Hidenori; Ohta, Hiromichi Thin Solid Films, Vol. 411, Issue 1 https://doi.org/10.1016/S0040-6090(02)00202-X	journal	May 2002
Growth and characterization of new transparent conductive oxides single crystals β-Ga2O3: Sn Zhang, Jungang; Xia, Changtai; Deng, Qun Journal of Physics and Chemistry of Solids, Vol. 67, Issue 8 https://doi.org/10.1016/j.jpcs.2006.02.018	journal	August 2006
Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor Matsuzaki, Kosuke; Hiramatsu, Hidenori; Nomura, Kenji Thin Solid Films, Vol. 496, Issue 1 https://doi.org/10.1016/j.tsf.2005.08.187	journal	February 2006
Homo- and heteroepitaxial growth of Sn-doped β-Ga ₂ O ₃ layers by MOVPE Gogova, D.; Schmidbauer, M.; Kwasniewski, A. CrystEngComm, Vol. 17, Issue 35 https://doi.org/10.1039/C5CE01106J	journal	January 2015
Band bending and surface defects in β -Ga ₂ O ₃ Lovejoy, T. C.; Chen, Renyu; Zheng, X. Applied Physics Letters, Vol. 100, Issue 18 https://doi.org/10.1063/1.4711014	journal	April 2012
Dopant activation in Sn-doped Ga ₂ O ₃ investigated by X-ray absorption spectroscopy Siah, S. C.; Brandt, R. E.; Lim, K. Applied Physics Letters, Vol. 107, Issue 25 https://doi.org/10.1063/1.4938123	journal	December 2015
Oxygen deficiency and Sn doping of amorphous Ga ₂ O ₃ Heinemann, M. D.; Berry, J.; Teeter, G. Applied Physics Letters, Vol. 108, Issue 2 https://doi.org/10.1063/1.4938473	journal	January 2016
Ab initio calculations on the defect structure of β -Ga 2 O 3 Zacherle, T.; Schmidt, P. C.; Martin, M. Physical Review B, Vol. 87, Issue 23 https://doi.org/10.1103/PhysRevB.87.235206	journal	June 2013
Thermodynamic Assessment of the Gallium-Oxygen System Zinkevich, Matvei; Aldinger, Fritz Journal of the American Ceramic Society, Vol. 87, Issue 4 https://doi.org/10.1111/j.1551-2916.2004.00683.x	journal	April 2004
?-Gallium Oxide as Oxygen Gas Sensors at a High Temperature Bartic, Marilena; Baban, Cristian-Ioan; Suzuki, Hisao Journal of the American Ceramic Society, Vol. 90, Issue 9 https://doi.org/10.1111/j.1551-2916.2007.01842.x	journal	September 2007
Epitaxial stabilization of pseudomorphic α-Ga ₂ O ₃ on sapphire (0001) Schewski, Robert; Wagner, Günter; Baldini, Michele Applied Physics Express, Vol. 8, Issue 1 https://doi.org/10.7567/APEX.8.011101	journal	December 2014

Cited By (5)

Strain in pseudomorphic monoclinic Ga ₂ O ₃ -based heterostructures: Pseudomorphic monoclinic heterostructures Grundmann, Marius physica status solidi (b), Vol. 254, Issue 9 https://doi.org/10.1002/pssb.201700134	journal	May 2017
Highly conductive homoepitaxial Si-doped Ga ₂ O ₃ films on (010) β-Ga ₂ O ₃ by pulsed laser deposition Leedy, Kevin D.; Chabak, Kelson D.; Vasilyev, Vladimir Applied Physics Letters, Vol. 111, Issue 1 https://doi.org/10.1063/1.4991363	journal	July 2017
A review of Ga ₂ O ₃ materials, processing, and devices Pearton, S. J.; Yang, Jiancheng; Cary, Patrick H. Applied Physics Reviews, Vol. 5, Issue 1 https://doi.org/10.1063/1.5006941	journal	March 2018
Epitaxial growth and interface band alignment studies of all oxide α-Cr ₂ O ₃ /β-Ga ₂ O ₃ p-n heterojunction Ghosh, Sahadeb; Baral, Madhusmita; Kamparath, Rajiv Applied Physics Letters, Vol. 115, Issue 6 https://doi.org/10.1063/1.5100589	journal	August 2019
Structural, Optical, and Electrical Characterization of β -Ga ₂ O ₃ Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing Arias, Abraham; Nedev, Nicola; Ghose, Susmita Advances in Materials Science and Engineering, Vol. 2018 https://doi.org/10.1155/2018/9450157	journal	January 2018

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Title: Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga2O3 thin films grown by pulsed laser deposition]

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References (12)

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Title: Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga₂O₃ thin films grown by pulsed laser deposition]