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Title: Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga 2O 3 thin films grown by pulsed laser deposition]

Beta-gallium oxide (β-Ga 2O 3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga 2O 3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga 2O 3 films on (0001) sapphire and (–201) Ga 2O 3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. As a result, there is a strong temperature dependence to the phase formation, morphology, and electronic properties of β-Ga 2O 3 from 350 to 550 °C.
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  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Colorado School of Mines, Golden, CO (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 2159-6859
Grant/Contract Number:
Accepted Manuscript
Journal Name:
MRS Communications
Additional Journal Information:
Journal Volume: 6; Journal Issue: 4; Journal ID: ISSN 2159-6859
Materials Research Society - Cambridge University Press
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Country of Publication:
United States
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; thin films; gallium oxide; optoelectronics; phase transformation; dopants
OSTI Identifier: