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Title: Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

Abstract

Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be used to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1];  [2];  [2];  [2];  [1]
  1. The Ohio State Univ., Columbus, OH (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1338910
Alternate Identifier(s):
OSTI ID: 1331405
Report Number(s):
SAND-2017-0055J
Journal ID: ISSN 0003-6951; 650201; TRN: US1701276
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 19; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., and Rajan, Siddharth. Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes. United States: N. p., 2016. Web. doi:10.1063/1.4967698.
Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., & Rajan, Siddharth. Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes. United States. doi:10.1063/1.4967698.
Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., and Rajan, Siddharth. Wed . "Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes". United States. doi:10.1063/1.4967698. https://www.osti.gov/servlets/purl/1338910.
@article{osti_1338910,
title = {Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes},
author = {Zhang, Yuewei and Krishnamoorthy, Sriram and Akyol, Fatih and Allerman, Andrew A. and Moseley, Michael W. and Armstrong, Andrew M. and Rajan, Siddharth},
abstractNote = {Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be used to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.},
doi = {10.1063/1.4967698},
journal = {Applied Physics Letters},
number = 19,
volume = 109,
place = {United States},
year = {2016},
month = {11}
}

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Works referenced in this record:

Optical and electrical properties of Mg-doped p-type AlxGa1−xN
journal, February 2002

  • Li, J.; Oder, T. N.; Nakarmi, M. L.
  • Applied Physics Letters, Vol. 80, Issue 7, p. 1210-1212
  • DOI: 10.1063/1.1450038

InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes
journal, October 2014

  • Krishnamoorthy, Sriram; Akyol, Fatih; Rajan, Siddharth
  • Applied Physics Letters, Vol. 105, Issue 14, Article No. 141104
  • DOI: 10.1063/1.4897342