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Title: Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories’ nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. Here, the displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.
Authors:
 [1] ;  [1] ;  [2] ;  [2] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Avogy, Inc., San Jose, CA (United States)
Publication Date:
Report Number(s):
SAND-2016-7133J
Journal ID: ISSN 0168-583X; PII: S0168583X16305092; TRN: US1701185
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Additional Journal Information:
Journal Name: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms; Journal ID: ISSN 0168-583X
Publisher:
Elsevier
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS; GaN; IBIC; displacement damage
OSTI Identifier:
1338314