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Title: Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance

Abstract

Here, total ionizing dose results are provided, showing the effects of different threshold adjust implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation-induced threshold voltage shift across a variety of transistor types is observed. Off-state leakage current of nMOSFET transistors exhibits a strong gate bias dependence, indicating electrostatic gate control of the sub-fin region and the corresponding parasitic conduction path are the largest concern for radiation hardness in FinFET technology. The high-Vth transistors exhibit the best irradiation performance across all bias conditions, showing a reasonably small change in off-state leakage current and Vth, while the low-Vth transistors exhibit a larger change in off-state leakage current. The “worst-case” bias condition during irradiation for both pull-down and pass-gate nMOSFETs in static random access memory is determined to be the on-state (Vgs = Vdd). We find the nMOSFET pull-down and pass-gate transistors of the SRAM bit-cell show less radiation-induced degradation due to transistor geometry and channel doping differences than the low-Vth transistor. Near-threshold operation is presented as a methodology for reducing radiation-induced increases in off-state device leakage current. In a 14-nm FinFET technology, the modeling indicates devices with high channel stop doping show the most robust response to TID allowing stablemore » operation of ring oscillators and the SRAM bit-cell with minimal shift in critical operating characteristics.« less

Authors:
ORCiD logo [1];  [2];  [2];  [2];  [1];  [1];  [1];  [1];  [1];  [1]; ORCiD logo [3]; ORCiD logo [3];  [3];  [3];  [3];  [3];  [3]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. GLOBALFOUNDRIES, Malta, NY (United States)
  3. Vanderbilt Univ., Nashville, TN (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1338310
Report Number(s):
SAND-2016-6554J
Journal ID: ISSN 0018-9499; 644863; TRN: US1701170
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Name: IEEE Transactions on Nuclear Science; Journal ID: ISSN 0018-9499
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS; leakage current; FinFET; total ionizing dose; threshold voltage shift

Citation Formats

King, M. P., Wu, X., Eller, Manfred, Samavedam, Srikanth, Shaneyfelt, M. R., Silva, A. I., Draper, B. L., Rice, W. C., Meisenheimer, T. L., Felix, J. A., Shetler, K. J., Zhang, E. X., Haeffner, T. D., Ball, D. R., Alles, M. L., Kauppila, J. S., and Massengill, L. W.. Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance. United States: N. p., 2016. Web. https://doi.org/10.1109/tns.2016.2634538.
King, M. P., Wu, X., Eller, Manfred, Samavedam, Srikanth, Shaneyfelt, M. R., Silva, A. I., Draper, B. L., Rice, W. C., Meisenheimer, T. L., Felix, J. A., Shetler, K. J., Zhang, E. X., Haeffner, T. D., Ball, D. R., Alles, M. L., Kauppila, J. S., & Massengill, L. W.. Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance. United States. https://doi.org/10.1109/tns.2016.2634538
King, M. P., Wu, X., Eller, Manfred, Samavedam, Srikanth, Shaneyfelt, M. R., Silva, A. I., Draper, B. L., Rice, W. C., Meisenheimer, T. L., Felix, J. A., Shetler, K. J., Zhang, E. X., Haeffner, T. D., Ball, D. R., Alles, M. L., Kauppila, J. S., and Massengill, L. W.. Wed . "Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance". United States. https://doi.org/10.1109/tns.2016.2634538. https://www.osti.gov/servlets/purl/1338310.
@article{osti_1338310,
title = {Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance},
author = {King, M. P. and Wu, X. and Eller, Manfred and Samavedam, Srikanth and Shaneyfelt, M. R. and Silva, A. I. and Draper, B. L. and Rice, W. C. and Meisenheimer, T. L. and Felix, J. A. and Shetler, K. J. and Zhang, E. X. and Haeffner, T. D. and Ball, D. R. and Alles, M. L. and Kauppila, J. S. and Massengill, L. W.},
abstractNote = {Here, total ionizing dose results are provided, showing the effects of different threshold adjust implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation-induced threshold voltage shift across a variety of transistor types is observed. Off-state leakage current of nMOSFET transistors exhibits a strong gate bias dependence, indicating electrostatic gate control of the sub-fin region and the corresponding parasitic conduction path are the largest concern for radiation hardness in FinFET technology. The high-Vth transistors exhibit the best irradiation performance across all bias conditions, showing a reasonably small change in off-state leakage current and Vth, while the low-Vth transistors exhibit a larger change in off-state leakage current. The “worst-case” bias condition during irradiation for both pull-down and pass-gate nMOSFETs in static random access memory is determined to be the on-state (Vgs = Vdd). We find the nMOSFET pull-down and pass-gate transistors of the SRAM bit-cell show less radiation-induced degradation due to transistor geometry and channel doping differences than the low-Vth transistor. Near-threshold operation is presented as a methodology for reducing radiation-induced increases in off-state device leakage current. In a 14-nm FinFET technology, the modeling indicates devices with high channel stop doping show the most robust response to TID allowing stable operation of ring oscillators and the SRAM bit-cell with minimal shift in critical operating characteristics.},
doi = {10.1109/tns.2016.2634538},
journal = {IEEE Transactions on Nuclear Science},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {12}
}

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