The development of a high sensitivity neutron displacement damage sensor
Abstract
Here, the capability to characterize the neutron energy spectrum and fluence received by a test object is crucial to under-standing the damage effects observed in electronic components. For nuclear research reactors and high energy density physics fa-cilities this can pose exceptional challenges, especially with low level neutron fluences. An ASTM test method for characterizing neutron environments utilizes the 2N2222A transistor as a 1-MeV equivalent neutron fluence sensor and is applicable for environ-ments with 1 x 1012 - 1 x 1014 1-MeV(Si)-Eqv.-n/cm2. In this work we seek to extend the range of this test method to lower fluence environments utilizing the 2N1486 transistor. Here, the 2N1486 is shown to be an effective neutron displacement damage sensor as low as 1 x 1010 1-MeV(Si)-Eqv.-n/cm2.
- Authors:
-
- Vanderbilt Univ., Nashville, TN (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1338309
- Report Number(s):
- SAND-2016-6510J
Journal ID: ISSN 0018-9499; 644829; TRN: US1701217
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- IEEE Transactions on Nuclear Science
- Additional Journal Information:
- Journal Name: IEEE Transactions on Nuclear Science; Journal ID: ISSN 0018-9499
- Publisher:
- Institute of Electrical and Electronics Engineers (IEEE)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; neutron radiation effects; bipolar devices; displacement damage; radiation monitoring
Citation Formats
Tonigan, Andrew M., Parma, Edward J., and Martin, William J. The development of a high sensitivity neutron displacement damage sensor. United States: N. p., 2016.
Web. doi:10.1109/tns.2016.2632525.
Tonigan, Andrew M., Parma, Edward J., & Martin, William J. The development of a high sensitivity neutron displacement damage sensor. United States. https://doi.org/10.1109/tns.2016.2632525
Tonigan, Andrew M., Parma, Edward J., and Martin, William J. Wed .
"The development of a high sensitivity neutron displacement damage sensor". United States. https://doi.org/10.1109/tns.2016.2632525. https://www.osti.gov/servlets/purl/1338309.
@article{osti_1338309,
title = {The development of a high sensitivity neutron displacement damage sensor},
author = {Tonigan, Andrew M. and Parma, Edward J. and Martin, William J.},
abstractNote = {Here, the capability to characterize the neutron energy spectrum and fluence received by a test object is crucial to under-standing the damage effects observed in electronic components. For nuclear research reactors and high energy density physics fa-cilities this can pose exceptional challenges, especially with low level neutron fluences. An ASTM test method for characterizing neutron environments utilizes the 2N2222A transistor as a 1-MeV equivalent neutron fluence sensor and is applicable for environ-ments with 1 x 1012 - 1 x 1014 1-MeV(Si)-Eqv.-n/cm2. In this work we seek to extend the range of this test method to lower fluence environments utilizing the 2N1486 transistor. Here, the 2N1486 is shown to be an effective neutron displacement damage sensor as low as 1 x 1010 1-MeV(Si)-Eqv.-n/cm2.},
doi = {10.1109/tns.2016.2632525},
journal = {IEEE Transactions on Nuclear Science},
number = ,
volume = ,
place = {United States},
year = {Wed Nov 23 00:00:00 EST 2016},
month = {Wed Nov 23 00:00:00 EST 2016}
}
Web of Science
Works referencing / citing this record:
Experimental study of pulse neutron irradiation damage in SiGe HBT
journal, September 2018
- Lawal, Olarewaju Mubashiru; Li, Zhuoqi; Liu, Shuhuan
- Journal of Nuclear Science and Technology, Vol. 55, Issue 12