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Title: Two-dimensional lateral GaN/SiC heterostructures: First-principles studies of electronic and magnetic properties

Authors:
; ; ; ;
Publication Date:
Grant/Contract Number:
FG02-02ER45995
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 95 Journal Issue: 4; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1338106

Chen, Guo-Xiang, Li, Xiang-Guo, Wang, Yun-Peng, Fry, James N., and Cheng, Hai-Ping. Two-dimensional lateral GaN/SiC heterostructures: First-principles studies of electronic and magnetic properties. United States: N. p., Web. doi:10.1103/PhysRevB.95.045302.
Chen, Guo-Xiang, Li, Xiang-Guo, Wang, Yun-Peng, Fry, James N., & Cheng, Hai-Ping. Two-dimensional lateral GaN/SiC heterostructures: First-principles studies of electronic and magnetic properties. United States. doi:10.1103/PhysRevB.95.045302.
Chen, Guo-Xiang, Li, Xiang-Guo, Wang, Yun-Peng, Fry, James N., and Cheng, Hai-Ping. 2017. "Two-dimensional lateral GaN/SiC heterostructures: First-principles studies of electronic and magnetic properties". United States. doi:10.1103/PhysRevB.95.045302.
@article{osti_1338106,
title = {Two-dimensional lateral GaN/SiC heterostructures: First-principles studies of electronic and magnetic properties},
author = {Chen, Guo-Xiang and Li, Xiang-Guo and Wang, Yun-Peng and Fry, James N. and Cheng, Hai-Ping},
abstractNote = {},
doi = {10.1103/PhysRevB.95.045302},
journal = {Physical Review B},
number = 4,
volume = 95,
place = {United States},
year = {2017},
month = {1}
}

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