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Title: Photon-phonon-enhanced infrared rectification in a two-dimensional nanoantenna-coupled tunnel diode

The interplay of strong infrared photon-phonon coupling with electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast photon-assisted tunneling in metal-oxide-semiconductor (MOS) structures. Infrared active optical phonon modes in polar oxides lead to strong dispersion and enhanced electric fields at material interfaces. We find that the infrared dispersion of SiO 2 near a longitudinal optical phonon mode can effectively impedance match a photonic surface mode into a nanoscale tunnel gap that results in large transverse-field confinement. An integrated 2D nanoantenna structure on a distributed large-area MOS tunnel-diode rectifier is designed and built to resonantly excite infrared surface modes and is shown to efficiently channel infrared radiation into nanometer-scale gaps in these MOS devices. This enhanced-gap transverse-electric field is converted to a rectified tunneling displacement current resulting in a dc photocurrent. We examine the angular and polarization-dependent spectral photocurrent response of these 2D nanoantenna-coupled tunnel diodes in the photon-enhanced tunneling spectral region. Lastly, our 2D nanoantenna-coupled infrared tunnel-diode rectifier promises to impact large-area thermal energy harvesting and infrared direct detectors.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND-2017-1541J
Journal ID: ISSN 2331-7019; PRAHB2; 654270; TRN: US1702646
Grant/Contract Number:
AC04-94AL85000
Type:
Published Article
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 6; Journal Issue: 6; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society (APS)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
OSTI Identifier:
1338082
Alternate Identifier(s):
OSTI ID: 1365811

Kadlec, Emil A., Jarecki, Robert L., Starbuck, Andrew, Peters, David W., and Davids, Paul S.. Photon-phonon-enhanced infrared rectification in a two-dimensional nanoantenna-coupled tunnel diode. United States: N. p., Web. doi:10.1103/PhysRevApplied.6.064019.
Kadlec, Emil A., Jarecki, Robert L., Starbuck, Andrew, Peters, David W., & Davids, Paul S.. Photon-phonon-enhanced infrared rectification in a two-dimensional nanoantenna-coupled tunnel diode. United States. doi:10.1103/PhysRevApplied.6.064019.
Kadlec, Emil A., Jarecki, Robert L., Starbuck, Andrew, Peters, David W., and Davids, Paul S.. 2016. "Photon-phonon-enhanced infrared rectification in a two-dimensional nanoantenna-coupled tunnel diode". United States. doi:10.1103/PhysRevApplied.6.064019.
@article{osti_1338082,
title = {Photon-phonon-enhanced infrared rectification in a two-dimensional nanoantenna-coupled tunnel diode},
author = {Kadlec, Emil A. and Jarecki, Robert L. and Starbuck, Andrew and Peters, David W. and Davids, Paul S.},
abstractNote = {The interplay of strong infrared photon-phonon coupling with electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast photon-assisted tunneling in metal-oxide-semiconductor (MOS) structures. Infrared active optical phonon modes in polar oxides lead to strong dispersion and enhanced electric fields at material interfaces. We find that the infrared dispersion of SiO2 near a longitudinal optical phonon mode can effectively impedance match a photonic surface mode into a nanoscale tunnel gap that results in large transverse-field confinement. An integrated 2D nanoantenna structure on a distributed large-area MOS tunnel-diode rectifier is designed and built to resonantly excite infrared surface modes and is shown to efficiently channel infrared radiation into nanometer-scale gaps in these MOS devices. This enhanced-gap transverse-electric field is converted to a rectified tunneling displacement current resulting in a dc photocurrent. We examine the angular and polarization-dependent spectral photocurrent response of these 2D nanoantenna-coupled tunnel diodes in the photon-enhanced tunneling spectral region. Lastly, our 2D nanoantenna-coupled infrared tunnel-diode rectifier promises to impact large-area thermal energy harvesting and infrared direct detectors.},
doi = {10.1103/PhysRevApplied.6.064019},
journal = {Physical Review Applied},
number = 6,
volume = 6,
place = {United States},
year = {2016},
month = {12}
}

Works referenced in this record:

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