Selective Area Epitaxy of GaAs Microstructures by Close-Spaced Vapor Transport for Solar Energy Conversion Applications

Greenaway, Ann L.; Sharps, Meredith C.; Boucher, Jason W.; Strange, Lyndi E.; Kast, Matthew G.; Aloni, Shaul; Boettcher, Shannon W.

doi:10.1021/acsenergylett.6b00217

Title: Selective Area Epitaxy of GaAs Microstructures by Close-Spaced Vapor Transport for Solar Energy Conversion Applications

Journal Article · 25 July 2016 · ACS Energy Letters

DOI: https://doi.org/10.1021/acsenergylett.6b00217 · OSTI ID:1337792

Greenaway, Ann L. ^[1]; Sharps, Meredith C. ^[1]; Boucher, Jason W. ^[2]; Strange, Lyndi E. ^[1]; Kast, Matthew G. ^[1]; Aloni, Shaul ^[3]; Boettcher, Shannon W. ^[1]

Department of Chemistry and Biochemistry, University of Oregon, Eugene, Oregon 97403, United States
Department of Physics, University of Oregon, Eugene, Oregon 97403, United States
The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

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Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: EE0005957

OSTI ID:: 1337792

Journal Information:: ACS Energy Letters, Journal Name: ACS Energy Letters Journal Issue: 2 Vol. 1; ISSN 2380-8195

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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