DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Selective Area Epitaxy of GaAs Microstructures by Close-Spaced Vapor Transport for Solar Energy Conversion Applications

Authors:
 [1];  [1];  [2];  [1];  [1];  [3];  [1]
  1. Department of Chemistry and Biochemistry, University of Oregon, Eugene, Oregon 97403, United States
  2. Department of Physics, University of Oregon, Eugene, Oregon 97403, United States
  3. The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
Publication Date:
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1337792
Grant/Contract Number:  
EE0005957
Resource Type:
Published Article
Journal Name:
ACS Energy Letters
Additional Journal Information:
Journal Name: ACS Energy Letters Journal Volume: 1 Journal Issue: 2; Journal ID: ISSN 2380-8195
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English

Citation Formats

Greenaway, Ann L., Sharps, Meredith C., Boucher, Jason W., Strange, Lyndi E., Kast, Matthew G., Aloni, Shaul, and Boettcher, Shannon W. Selective Area Epitaxy of GaAs Microstructures by Close-Spaced Vapor Transport for Solar Energy Conversion Applications. United States: N. p., 2016. Web. doi:10.1021/acsenergylett.6b00217.
Greenaway, Ann L., Sharps, Meredith C., Boucher, Jason W., Strange, Lyndi E., Kast, Matthew G., Aloni, Shaul, & Boettcher, Shannon W. Selective Area Epitaxy of GaAs Microstructures by Close-Spaced Vapor Transport for Solar Energy Conversion Applications. United States. https://doi.org/10.1021/acsenergylett.6b00217
Greenaway, Ann L., Sharps, Meredith C., Boucher, Jason W., Strange, Lyndi E., Kast, Matthew G., Aloni, Shaul, and Boettcher, Shannon W. Mon . "Selective Area Epitaxy of GaAs Microstructures by Close-Spaced Vapor Transport for Solar Energy Conversion Applications". United States. https://doi.org/10.1021/acsenergylett.6b00217.
@article{osti_1337792,
title = {Selective Area Epitaxy of GaAs Microstructures by Close-Spaced Vapor Transport for Solar Energy Conversion Applications},
author = {Greenaway, Ann L. and Sharps, Meredith C. and Boucher, Jason W. and Strange, Lyndi E. and Kast, Matthew G. and Aloni, Shaul and Boettcher, Shannon W.},
abstractNote = {},
doi = {10.1021/acsenergylett.6b00217},
journal = {ACS Energy Letters},
number = 2,
volume = 1,
place = {United States},
year = {2016},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1021/acsenergylett.6b00217

Citation Metrics:
Cited by: 4 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Effects of Crystal Phase Mixing on the Electrical Properties of InAs Nanowires
journal, June 2011

  • Thelander, Claes; Caroff, Philippe; Plissard, Sébastien
  • Nano Letters, Vol. 11, Issue 6
  • DOI: 10.1021/nl2008339

Selective-area growth of III-V nanowires and their applications
journal, July 2011

  • Tomioka, Katsuhiro; Ikejiri, Keitaro; Tanaka, Tomotaka
  • Journal of Materials Research, Vol. 26, Issue 17
  • DOI: 10.1557/jmr.2011.103

GaAs-on-silicon conformal vapor-phase epitaxy using reversible transport and selective etching reactions with water vapour
journal, May 2001


Anisotropy of selective epitaxy in nanoscale-patterned growth: GaAs nanowires selectively grown on a SiO2-patterned (001) substrate by molecular-beam epitaxy
journal, December 2005

  • Lee, S. C.; Dawson, L. R.; Brueck, S. R. J.
  • Journal of Applied Physics, Vol. 98, Issue 11
  • DOI: 10.1063/1.2132093

The Use of Close Spacing in Chemical-Transport Systems for Growing Epitaxial Layers of Semiconductors
journal, January 1963

  • Nicoll, F. H.
  • Journal of The Electrochemical Society, Vol. 110, Issue 11
  • DOI: 10.1149/1.2425614

Epitaxial growth of InP nanowires on germanium
journal, October 2004

  • Bakkers, Erik P. A. M.; van Dam, Jorden A.; De Franceschi, Silvano
  • Nature Materials, Vol. 3, Issue 11
  • DOI: 10.1038/nmat1235

Effect of Twinning on the Photoluminescence and Photoelectrochemical Properties of Indium Phosphide Nanowires Grown on Silicon (111)
journal, December 2008

  • Woo, Robyn L.; Xiao, Rui; Kobayashi, Yoji
  • Nano Letters, Vol. 8, Issue 12
  • DOI: 10.1021/nl802433u

Epitaxial Growth of III-V Nanowires on Group IV Substrates
journal, February 2007

  • Bakkers, Erik P. A. M.; Borgström, Magnus T.; Verheijen, Marcel A.
  • MRS Bulletin, Vol. 32, Issue 2
  • DOI: 10.1557/mrs2007.43

Dislocation and antiphase domain free microscale GaAs crystals grown on SiO 2 from (001) Si nano-areas
journal, May 2013

  • Renard, C.; Cherkasin, N.; Jaffre, A.
  • Applied Physics Letters, Vol. 102, Issue 19
  • DOI: 10.1063/1.4807386

Gold-free growth of GaAs nanowires on silicon: arrays and polytypism
journal, August 2010


Evolution of GaAs nanowire geometry in selective area epitaxy
journal, March 2015

  • Bassett, Kevin P.; Mohseni, Parsian K.; Li, Xiuling
  • Applied Physics Letters, Vol. 106, Issue 13
  • DOI: 10.1063/1.4916347

Recombination velocity at oxide–GaAs interfaces fabricated by in situ molecular beam epitaxy
journal, June 1996

  • Passlack, M.; Hong, M.; Mannaerts, J. P.
  • Applied Physics Letters, Vol. 68, Issue 25
  • DOI: 10.1063/1.116652

Twin-Free Uniform Epitaxial GaAs Nanowires Grown by a Two-Temperature Process
journal, April 2007

  • Joyce, Hannah J.; Gao, Qiang; Tan, H. Hoe
  • Nano Letters, Vol. 7, Issue 4
  • DOI: 10.1021/nl062755v

Temperature dependence of stacking faults in catalyst-free GaAs nanopillars
journal, November 2013


Structural Phase Control in Self-Catalyzed Growth of GaAs Nanowires on Silicon (111)
journal, November 2010

  • Krogstrup, Peter; Popovitz-Biro, Ronit; Johnson, Erik
  • Nano Letters, Vol. 10, Issue 11
  • DOI: 10.1021/nl102308k

Epitaxy of GaAs by the Close-Spaced Vapor Transport Technique
journal, January 1986

  • Co^té, D.
  • Journal of The Electrochemical Society, Vol. 133, Issue 9
  • DOI: 10.1149/1.2109051

Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism
journal, February 2016


A III–V nanowire channel on silicon for high-performance vertical transistors
journal, August 2012

  • Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi
  • Nature, Vol. 488, Issue 7410
  • DOI: 10.1038/nature11293

Phase Perfection in Zinc Blende and Wurtzite III−V Nanowires Using Basic Growth Parameters
journal, March 2010

  • Joyce, Hannah J.; Wong-Leung, Jennifer; Gao, Qiang
  • Nano Letters, Vol. 10, Issue 3
  • DOI: 10.1021/nl903688v

Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition
journal, October 2015


Nanoscale Growth of GaAs on Patterned Si(111) Substrates by Molecular Beam Epitaxy
journal, December 2013

  • Chu, Chia-Pu; Arafin, Shamsul; Nie, Tianxiao
  • Crystal Growth & Design, Vol. 14, Issue 2
  • DOI: 10.1021/cg401423d

Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures
journal, February 2015

  • Brown, Evan; Sheng, Chunyang; Shimamura, Kohei
  • Journal of Applied Physics, Vol. 117, Issue 5
  • DOI: 10.1063/1.4907534

Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates
journal, December 2004


Homojunction GaAs solar cells grown by close space vapor transport
conference, June 2014

  • Boucher, Jason W.; Ritenour, Andrew J.; Greenaway, Ann L.
  • 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
  • DOI: 10.1109/PVSC.2014.6924959

Selectively-grown InGaP/GaAs on silicon heterostructures for application to photovoltaic–photoelectrolysis cells
journal, May 2001


Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications
journal, February 2010

  • Kelzenberg, Michael D.; Boettcher, Shannon W.; Petykiewicz, Jan A.
  • Nature Materials, Vol. 9, Issue 3, p. 239-244
  • DOI: 10.1038/nmat2635

Electronic properties of twin boundaries and twinning superlattices in diamond-type and zinc-blende-type semiconductors
journal, December 1993


Controlled polytypic and twin-plane superlattices in iii–v nanowires
journal, November 2008


Gold-Free GaAs Nanowire Synthesis and Optical Properties
journal, July 2011

  • Morral, A. Fontcuberta i.
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 17, Issue 4
  • DOI: 10.1109/JSTQE.2010.2091259

Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics
journal, January 2015

  • Ritenour, Andrew J.; Boucher, Jason W.; DeLancey, Robert
  • Energy & Environmental Science, Vol. 8, Issue 1
  • DOI: 10.1039/C4EE01943A

Stacking-Faults-Free Zinc Blende GaAs Nanowires
journal, January 2009

  • Shtrikman, Hadas; Popovitz-Biro, Ronit; Kretinin, Andrey
  • Nano Letters, Vol. 9, Issue 1
  • DOI: 10.1021/nl8027872

Electrolytic synthesis of aqueous aluminum nanoclusters and in situ characterization by femtosecond Raman spectroscopy and computations
journal, October 2013

  • Wang, W.; Liu, W.; Chang, I. -Y.
  • Proceedings of the National Academy of Sciences, Vol. 110, Issue 46
  • DOI: 10.1073/pnas.1315396110

Direct Observation of a Noncatalytic Growth Regime for GaAs Nanowires
journal, August 2011

  • Rudolph, Daniel; Hertenberger, Simon; Bolte, Stefanie
  • Nano Letters, Vol. 11, Issue 9
  • DOI: 10.1021/nl2019382

Efficient n -GaAs Photoelectrodes Grown by Close-Spaced Vapor Transport from a Solid Source
journal, December 2011

  • Ritenour, Andrew J.; Cramer, Richard C.; Levinrad, Solomon
  • ACS Applied Materials & Interfaces, Vol. 4, Issue 1
  • DOI: 10.1021/am201631p

Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire-array photoanodes
journal, January 2013

  • Hu, Shu; Chi, Chun-Yung; Fountaine, Katherine T.
  • Energy & Environmental Science, Vol. 6, Issue 6
  • DOI: 10.1039/c3ee40243f

Gallium arsenide phosphide grown by close-spaced vapor transport from mixed powder sources for low-cost III–V photovoltaic and photoelectrochemical devices
journal, January 2016

  • Greenaway, Ann L.; Davis, Allison L.; Boucher, Jason W.
  • Journal of Materials Chemistry A, Vol. 4, Issue 8
  • DOI: 10.1039/C5TA06900A

Twin-Free GaAs Nanosheets by Selective Area Growth: Implications for Defect-Free Nanostructures
journal, May 2013

  • Chi, Chun-Yung; Chang, Chia-Chi; Hu, Shu
  • Nano Letters, Vol. 13, Issue 6
  • DOI: 10.1021/nl400561j

Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE
journal, January 2007


III–V semiconductor nanowires for optoelectronic device applications
journal, March 2011


Growth of semiconductors by the close-spaced vapor transport technique: A review
journal, October 1988

  • Perrier, G.; Philippe, R.; Dodelet, J. P.
  • Journal of Materials Research, Vol. 3, Issue 5
  • DOI: 10.1557/JMR.1988.1031

Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon
journal, February 2013

  • Holm, Jeppe V.; Jørgensen, Henrik I.; Krogstrup, Peter
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms2510

Effects of twins on the electronic properties of GaAs
journal, July 2013

  • Shimamura, Kohei; Yuan, Zaoshi; Shimojo, Fuyuki
  • Applied Physics Letters, Vol. 103, Issue 2
  • DOI: 10.1063/1.4811746

Morphological and spatial control of InP growth using closed-space sublimation
journal, December 2012

  • Kiriya, Daisuke; Zheng, Maxwell; Kapadia, Rehan
  • Journal of Applied Physics, Vol. 112, Issue 12
  • DOI: 10.1063/1.4768836

Growth characteristics of GaAs nanowires obtained by selective area metal–organic vapour-phase epitaxy
journal, May 2008


InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit
journal, January 2013


Wafer-Scale Fabrication of Self-Catalyzed 1.7 eV GaAsP Core–Shell Nanowire Photocathode on Silicon Substrates
journal, March 2014

  • Wu, Jiang; Li, Yanbo; Kubota, Jun
  • Nano Letters, Vol. 14, Issue 4
  • DOI: 10.1021/nl500170m

Silver as Seed-Particle Material for GaAs Nanowires—Dictating Crystal Phase and Growth Direction by Substrate Orientation
journal, March 2016