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Title: Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes

Here, the internal quantum efficiencies (IQE) and carrier lifetimes of semipolar ($$20\bar{2}$$$\bar{1}$$) InGaN/GaN LEDs with different active regions are measured using temperature-dependent, carrier-density-dependent, and time-resolved photoluminescence. Three active regions are investigated: one 12-nm-thick single quantum well (SQW), two 6-nm-thick QWs, and three 4-nm-thick QWs. The IQE is highest for the 12-nm-thick SQW and decreases as the well width decreases. The radiative lifetimes are similar for all structures, while the nonradiative lifetimes decrease as the well width decreases. The superior IQE and longer nonradiative lifetime of the SQW structure suggests using thick SQW active regions for high brightness semipolar ($$20\bar{2}$$$\bar{1}$$) LEDs.
Authors:
 [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [3] ;  [3] ;  [1]
  1. Univ. of New Mexico, Albuquerque, NM (United States)
  2. Univ. of California, Santa Barbara, CA (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Optics Express
Additional Journal Information:
Journal Volume: 25; Journal Issue: 3; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America (OSA)
Research Org:
Univ. of New Mexico, Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Contributing Orgs:
Sandia National Laboratories, Solid State Lighting and Energy Electronics Center (SSLEEC), University of New Mexico
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; light emitting diodes; spectroscopy; time-resolved; photoluminescence; Quantum-well, -wire and -dot devices
OSTI Identifier:
1337779

Okur, Serdal, Nami, Mohsen, Rishinaramangalam, Ashwin K., Oh, Sang H., DenBaars, Steve P., Liu, Sheng, Brener, Igal, and Feezell, Daniel F.. Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes. United States: N. p., Web. doi:10.1364/OE.25.002178.
Okur, Serdal, Nami, Mohsen, Rishinaramangalam, Ashwin K., Oh, Sang H., DenBaars, Steve P., Liu, Sheng, Brener, Igal, & Feezell, Daniel F.. Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes. United States. doi:10.1364/OE.25.002178.
Okur, Serdal, Nami, Mohsen, Rishinaramangalam, Ashwin K., Oh, Sang H., DenBaars, Steve P., Liu, Sheng, Brener, Igal, and Feezell, Daniel F.. 2017. "Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes". United States. doi:10.1364/OE.25.002178. https://www.osti.gov/servlets/purl/1337779.
@article{osti_1337779,
title = {Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes},
author = {Okur, Serdal and Nami, Mohsen and Rishinaramangalam, Ashwin K. and Oh, Sang H. and DenBaars, Steve P. and Liu, Sheng and Brener, Igal and Feezell, Daniel F.},
abstractNote = {Here, the internal quantum efficiencies (IQE) and carrier lifetimes of semipolar ($20\bar{2}$$\bar{1}$) InGaN/GaN LEDs with different active regions are measured using temperature-dependent, carrier-density-dependent, and time-resolved photoluminescence. Three active regions are investigated: one 12-nm-thick single quantum well (SQW), two 6-nm-thick QWs, and three 4-nm-thick QWs. The IQE is highest for the 12-nm-thick SQW and decreases as the well width decreases. The radiative lifetimes are similar for all structures, while the nonradiative lifetimes decrease as the well width decreases. The superior IQE and longer nonradiative lifetime of the SQW structure suggests using thick SQW active regions for high brightness semipolar ($20\bar{2}$$\bar{1}$) LEDs.},
doi = {10.1364/OE.25.002178},
journal = {Optics Express},
number = 3,
volume = 25,
place = {United States},
year = {2017},
month = {1}
}